Polarity-reversed robust carrier mobility in monolayer MoS₂ nanoribbons.
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Tinselenidene: a Two-dimensional Auxetic Material with Ultralow Lattice Thermal Conductivity and Ultrahigh Hole Mobility.First-Principles Determination of Ultralow Thermal Conductivity of monolayer WSe2Thermoelectric and phonon transport properties of two-dimensional IV-VI compoundsRemote p-type Doping in GaSb/InAs Core-shell Nanowires.Excellent Thermoelectric Properties in monolayer WSe2 Nanoribbons due to Ultralow Phonon Thermal ConductivityMnPSe3 Monolayer: A Promising 2D Visible-Light Photohydrolytic Catalyst with High Carrier Mobility.Simulation Evidence of Hexagonal-to-Tetragonal ZnSe Structure Transition: A Monolayer Material with a Wide-Range Tunable Direct BandgapPerformance of arsenene and antimonene double-gate MOSFETs from first principles.Robust Direct Bandgap Characteristics of One- and Two-Dimensional ReS2Fabrication of MoSe2 nanoribbons via an unusual morphological phase transition.Large Area Fabrication of Semiconducting Phosphorene by Langmuir-Blodgett Assembly.Unexpected magnetic semiconductor behavior in zigzag phosphorene nanoribbons driven by half-filled one dimensional bandTitanium trisulfide (TiS3): a 2D semiconductor with quasi-1D optical and electronic properties.Anisotropic carrier mobility in buckled two-dimensional GaN.Titanium trisulfide monolayer: theoretical prediction of a new direct-gap semiconductor with high and anisotropic carrier mobility.Layer-dependent band alignment and work function of few-layer phosphorene.Recent progress in 2D group-VA semiconductors: from theory to experiment.Two-dimensional semiconductors ZrNCl and HfNCl: Stability, electric transport, and thermoelectric properties.Oxygen-induced degradation of the electronic properties of thin-layer InSe.Giant anisotropic photogalvanic effect in a flexible AsSb monolayer with ultrahigh carrier mobility.Ultrathin Layers of PdPX (X=S, Se): Two Dimensional Semiconductors for Photocatalytic Water Splitting.Electronic structures and transport properties of a MoS2-NbS2 nanoribbon lateral heterostructure.A graphene-like Mg3N2 monolayer: high stability, desirable direct band gap and promising carrier mobility.Stability and carrier mobility of organic-inorganic hybrid perovskite CH3NH3PbI3 in two-dimensional limit.Topological insulating states in 2D transition metal dichalcogenides induced by defects and strain.Enhancement of hole mobility in InSe monolayer via an InSe and black phosphorus heterostructure.Monolayer PdSe2: A promising two-dimensional thermoelectric material.A CO monolayer: first-principles design of a new direct band-gap semiconductor with excellent mechanical properties.Prediction of a new BeC monolayer with perfectly planar tetracoordinate carbons.The ideal strength of two-dimensional stanene may reach or exceed the Griffith strength estimate.Multifunctional heterostructures constructed using MoS2 and WS2 nanoribbons.Acute mechano-electronic responses in twisted phosphorene nanoribbons.Two-dimensional BX (X = P, As, Sb) semiconductors with mobilities approaching graphene.Tuning the electronic properties and work functions of graphane/fully hydrogenated h-BN heterobilayers via heteronuclear dihydrogen bonding and electric field control.Strain enhancement of acoustic phonon limited mobility in monolayer TiS3.High and anisotropic carrier mobility in experimentally possible Ti2CO2 (MXene) monolayers and nanoribbons.Degenerate Effect on the Mobility of Holes in Graphane: A Study Based on Density Functional Theory Coupled with Deformation Potential Theory.Ultra low lattice thermal conductivity and high carrier mobility of monolayer SnS2 and SnSe2: a first principles study.Monolayer Molybdenum Disulfide Nanoribbons with High Optical AnisotropyLow-Dimensional Transition Metal Dichalcogenide Nanostructures Based Sensors
P2860
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P2860
Polarity-reversed robust carrier mobility in monolayer MoS₂ nanoribbons.
description
2014 nî lūn-bûn
@nan
2014年の論文
@ja
2014年学术文章
@wuu
2014年学术文章
@zh
2014年学术文章
@zh-cn
2014年学术文章
@zh-hans
2014年学术文章
@zh-my
2014年学术文章
@zh-sg
2014年學術文章
@yue
2014年學術文章
@zh-hant
name
Polarity-reversed robust carrier mobility in monolayer MoS₂ nanoribbons.
@en
Polarity-reversed robust carrier mobility in monolayer MoS₂ nanoribbons.
@nl
type
label
Polarity-reversed robust carrier mobility in monolayer MoS₂ nanoribbons.
@en
Polarity-reversed robust carrier mobility in monolayer MoS₂ nanoribbons.
@nl
prefLabel
Polarity-reversed robust carrier mobility in monolayer MoS₂ nanoribbons.
@en
Polarity-reversed robust carrier mobility in monolayer MoS₂ nanoribbons.
@nl
P2093
P356
P1476
Polarity-reversed robust carrier mobility in monolayer MoS₂ nanoribbons.
@en
P2093
Gang Zhang
Yong-Wei Zhang
Yongqing Cai
P304
P356
10.1021/JA4109787
P407
P577
2014-04-21T00:00:00Z