Insulating state of ultrathin epitaxial LaNiO3thin films detected by hard x-ray photoemission
about
Fermi level shifting, charge transfer and induced magnetic coupling at La0.7Ca0.3MnO3/LaNiO3 interface.Enhanced photoelectrochemical activity in all-oxide heterojunction devices based on correlated "metallic" oxides.Atomic-scale control of competing electronic phases in ultrathin LaNiO₃.Orbital polarization in strainedLaNiO3: Structural distortions and correlation effects
P2860
Insulating state of ultrathin epitaxial LaNiO3thin films detected by hard x-ray photoemission
description
im August 2011 veröffentlichter wissenschaftlicher Artikel
@de
wetenschappelijk artikel
@nl
наукова стаття, опублікована в серпні 2011
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name
Insulating state of ultrathin ...... ed by hard x-ray photoemission
@en
Insulating state of ultrathin ...... ed by hard x-ray photoemission
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type
label
Insulating state of ultrathin ...... ed by hard x-ray photoemission
@en
Insulating state of ultrathin ...... ed by hard x-ray photoemission
@nl
prefLabel
Insulating state of ultrathin ...... ed by hard x-ray photoemission
@en
Insulating state of ultrathin ...... ed by hard x-ray photoemission
@nl
P2093
P2860
P50
P1433
P1476
Insulating state of ultrathin ...... ed by hard x-ray photoemission
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P2093
A. M. Kaiser
A. X. Gray
C. G. Van de Walle
C. S. Fadley
J. M. LeBeau
K. Kobayashi
R. Sutarto
P2860
P356
10.1103/PHYSREVB.84.075104
P407
P577
2011-08-03T00:00:00Z