Oxygen vacancies and donor impurities in β-Ga2O3

Oxygen vacancies and donor impurities in β-Ga2O3

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http://www.wikidata.org/entity/Q56423782
The electronic properties of impurities (N, C, F, Cl, and S) in Ag3PO4: A hybrid functional method study.Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices.Mechanism of visible-light photocatalysis in nitrogen-doped TiO₂.Solution-Processed Gallium-Tin-Based Oxide Semiconductors for Thin-Film Transistors.First-principles study of Ga-vacancy induced magnetism in β-Ga2O3.Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics.Atomic layer deposited gallium oxide buffer layer enables 1.2 V open-circuit voltage in cuprous oxide solar cells.Erratum: “Oxygen vacancies and donor impurities in β-Ga2O3” [Appl. Phys. Lett. 97, 142106 (2010)]High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranesAnisotropic thermal conductivity of β-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopantsHigh throughput first-principles calculations of bixbyite oxides for TCO applications
P2860

Oxygen vacancies and donor impurities in β-Ga2O3

Item
http://www.wikidata.org/entity/Q56423782
description
im Oktober 2010 veröffentlichter wissenschaftlicher Artikel
@de
wetenschappelijk artikel
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наукова стаття, опублікована в жовтні 2010
@uk
name
Oxygen vacancies and donor impurities in β-Ga2O3
@en
Oxygen vacancies and donor impurities in β-Ga2O3
@nl
type
label
Oxygen vacancies and donor impurities in β-Ga2O3
@en
Oxygen vacancies and donor impurities in β-Ga2O3
@nl
prefLabel
Oxygen vacancies and donor impurities in β-Ga2O3
@en
Oxygen vacancies and donor impurities in β-Ga2O3
@nl
P1433
P1476
P2093
P2507
P304
P31
P356
P407
P433
P478
P50
P577
P5875
P356
P1433
P1476
Oxygen vacancies and donor impurities in β-Ga2O3
@en
P2093
P2507
P304
P31
P356
P407
P433
P478
P50
P577
P5875