Origins of Fermi-level pinning on GaN and InN polar and nonpolar surfaces
about
Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide.Wet chemical etching induced stress relaxed nanostructures on polar & non-polar epitaxial GaN films.Pit assisted oxygen chemisorption on GaN surfaces.Absolute surface energies of polar and nonpolar planes of GaNHybrid functional calculations of native point defects in InNAdvances in electronic structure methods for defects and impurities in solidsIntrinsic and extrinsic causes of electron accumulation layers on InAs surfacesOxidation and the origin of the two-dimensional electron gas in AlGaN/GaN heterostructuresReconstructions and origin of surface states on AlN polar and nonpolar surfacesSources of unintentional conductivity in InNPolarity-dependent pinning of a surface stateHidden surface states at non-polar GaN (101¯0) facets: Intrinsic pinning of nanowiresTransient photoluminescence of shallow donor bound excitons in GaNTuning the work function of GaN with organic molecular acceptors
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P2860
Origins of Fermi-level pinning on GaN and InN polar and nonpolar surfaces
description
im Oktober 2006 veröffentlichter wissenschaftlicher Artikel
@de
wetenschappelijk artikel
@nl
наукова стаття, опублікована в жовтні 2006
@uk
name
Origins of Fermi-level pinning on GaN and InN polar and nonpolar surfaces
@en
Origins of Fermi-level pinning on GaN and InN polar and nonpolar surfaces
@nl
type
label
Origins of Fermi-level pinning on GaN and InN polar and nonpolar surfaces
@en
Origins of Fermi-level pinning on GaN and InN polar and nonpolar surfaces
@nl
prefLabel
Origins of Fermi-level pinning on GaN and InN polar and nonpolar surfaces
@en
Origins of Fermi-level pinning on GaN and InN polar and nonpolar surfaces
@nl
P356
P1433
P1476
Origins of Fermi-level pinning on GaN and InN polar and nonpolar surfaces
@en
P2093
C. G. Van de Walle
P304
P356
10.1209/EPL/I2006-10250-2
P577
2006-10-01T00:00:00Z