Hidden surface states at non-polar GaN (101¯0) facets: Intrinsic pinning of nanowires
about
Fermi-level pinning and intrinsic surface states of Al1−xInxN(101¯0) surfacesProbing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopyPolarity-dependent pinning of a surface stateTracking the subsurface path of dislocations in GaN using scanning tunneling microscopyThe effect of polarity and surface states on the Fermi level at III-nitride surfaces
P2860
Hidden surface states at non-polar GaN (101¯0) facets: Intrinsic pinning of nanowires
description
im Oktober 2013 veröffentlichter wissenschaftlicher Artikel
@de
wetenschappelijk artikel
@nl
наукова стаття, опублікована в жовтні 2013
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name
Hidden surface states at non-polar GaN (101¯0) facets: Intrinsic pinning of nanowires
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Hidden surface states at non-polar GaN
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type
label
Hidden surface states at non-polar GaN (101¯0) facets: Intrinsic pinning of nanowires
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Hidden surface states at non-polar GaN
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prefLabel
Hidden surface states at non-polar GaN (101¯0) facets: Intrinsic pinning of nanowires
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Hidden surface states at non-polar GaN
@nl
P2093
P2860
P50
P356
P1476
Hidden surface states at non-polar GaN (101¯0) facets: Intrinsic pinning of nanowires
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P2093
D. Stiévenard
J. Neugebauer
P. H. Weidlich
P2860
P304
P356
10.1063/1.4823723
P407
P577
2013-10-07T00:00:00Z