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MoS2-Titanium Contact Interface Reactions.A kinetic Monte Carlo simulation method of van der Waals epitaxy for atomistic nucleation-growth processes of transition metal dichalcogenides.Carbon-based supercapacitors produced by activation of graphene.In situ TEM characterization of shear-stress-induced interlayer sliding in the cross section view of molybdenum disulfide.New Mo6 Te6 Sub-Nanometer-Diameter Nanowire Phase from 2H-MoTe2.MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts.Metal contacts on physical vapor deposited monolayer MoS2.Atomic layer deposition of a high-k dielectric on MoS2 using trimethylaluminum and ozone.Structure of ultra-thin diamond-like carbon films grown with filtered cathodic arc on Si(001).Probing Interface Defects in Top-Gated MoS2 Transistors with Impedance Spectroscopy.HfO(2) on MoS(2) by atomic layer deposition: adsorption mechanisms and thickness scalability.Hole selective MoOx contact for silicon solar cells.Silicon interfacial passivation layer chemistry for high-k/InP interfaces.Schottky Barrier Height of Pd/MoS2 Contact by Large Area Photoemission Spectroscopy.Defects and Surface Structural Stability of MoTe2 Under Vacuum Annealing.Sub-10 nm Tunable Hybrid Dielectric Engineering on MoS2 for Two-Dimensional Material-Based Devices.Two-dimensional gallium nitride realized via graphene encapsulation.Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors.Impurity and silicate formation dependence on O3 pulse time and the growth temperature in atomic-layer-deposited La2O3 thin films.Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure.GaN as an interfacial passivation layer: tuning band offset and removing fermi level pinning for III-V MOS devices.Tuning electronic transport in epitaxial graphene-based van der Waals heterostructures.Atomically thin heterostructures based on single-layer tungsten diselenide and graphene.Seeding atomic layer deposition of alumina on graphene with yttria.Impact of intrinsic atomic defects on the electronic structure of MoS2 monolayers.Fermi Level Manipulation through Native Doping in the Topological Insulator BiSeHighly scalable, atomically thin WSe2 grown via metal-organic chemical vapor depositionUnusual oxidation-induced core-level shifts at the HfO/InP interfaceUniform Wafer-Scale Chemical Vapor Deposition of Graphene on Evaporated Cu (111) Film with Quality Comparable to Exfoliated MonolayerHigh-κ Dielectric on ReS₂: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al₂O₃Atomic layer deposition of dielectrics on graphene using reversibly physisorbed ozoneReducing extrinsic performance-limiting factors in graphene grown by chemical vapor depositionMetal-graphene-metal sandwich contacts for enhanced interface bonding and work function controlCopper-metal deposition on self assembled monolayer for making top contacts in molecular electronic devicesHfSe2 thin films: 2D transition metal dichalcogenides grown by molecular beam epitaxyRealistic metal-graphene contact structuresDefect-dominated doping and contact resistance in MoS2The unusual mechanism of partial Fermi level pinning at metal-MoS2 interfacesHole contacts on transition metal dichalcogenides: interface chemistry and band alignmentsHigh-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth
P50
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P50
description
onderzoeker
@nl
researcher
@en
հետազոտող
@hy
name
Robert M Wallace
@ast
Robert M Wallace
@en
Robert M Wallace
@es
Robert M Wallace
@nl
type
label
Robert M Wallace
@ast
Robert M Wallace
@en
Robert M Wallace
@es
Robert M Wallace
@nl
prefLabel
Robert M Wallace
@ast
Robert M Wallace
@en
Robert M Wallace
@es
Robert M Wallace
@nl
P106
P1153
56544754700
P31
P496
0000-0001-5566-4806