A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers
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A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers
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im Februar 2016 veröffentlichter wissenschaftlicher Artikel
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wetenschappelijk artikel
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наукова стаття, опублікована в лютому 2016
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A comparison of the optical pr ...... thout Si-doped InGaN prelayers
@en
A comparison of the optical pr ...... thout Si-doped InGaN prelayers
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A comparison of the optical pr ...... thout Si-doped InGaN prelayers
@en
A comparison of the optical pr ...... thout Si-doped InGaN prelayers
@nl
prefLabel
A comparison of the optical pr ...... thout Si-doped InGaN prelayers
@en
A comparison of the optical pr ...... thout Si-doped InGaN prelayers
@nl
P2093
P2860
P50
P356
P1476
A comparison of the optical pr ...... thout Si-doped InGaN prelayers
@en
P2093
C. J. Humphreys
F. C.-P. Massabuau
M. J. Davies
P2860
P304
P356
10.1063/1.4941321
P577
2016-02-07T00:00:00Z