about
Lattice distortions in GaN on sapphire using the CBED-HOLZ technique.Imaging dislocations in gallium nitride across broad areas using atomic force microscopy.Practical Issues for Atom Probe Tomography Analysis of III-Nitride Semiconductor Materials.Low defect large area semi-polar (11[Formula: see text]2) GaN grown on patterned (113) silicon.A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates.Self-assembled Multilayers of Silica Nanospheres for Defect Reduction in Non- and Semipolar Gallium Nitride Epitaxial Layers.Cavity Enhancement of Single Quantum Dot Emission in the Blue.Segregation of In to dislocations in InGaN.Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping.Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties.Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures.Two-photon autocorrelation measurements on a single InGaN/GaN quantum dot.Electronic structure of GaN andInxGa1−xNmeasured with electron energy-loss spectroscopyFabrication of nanoscale heterostructure devices with a focused ion beam microscopeThe ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodesCarrier localization in the vicinity of dislocations in InGaNMechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growthPhotoluminescence studies of cubic GaN epilayersValidity of Vegard’s rule for Al1−xInxN (0.08 < x < 0.28) thin films grown on GaN templatesX-ray reflectivity method for the characterization of InGaN/GaN quantum well interfaceLocal carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescenceTheoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wellsComparative studies of efficiency droop in polar and non-polar InGaN quantum wellsThe nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wellsA comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayersAnalysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDsDielectric response of wurtzite gallium nitride in the terahertz frequency rangeEffect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structuresEffect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structuresEffect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDsInvestigating efficiency droop in InGaN/GaN quantum well structures using ultrafast time-resolved terahertz and photoluminescence spectroscopyRoom temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wellsThe microstructure of non-polar a-plane (11 2¯0) InGaN quantum wellsEffects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regionsMicrostructural dependency of optical properties of m-plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substratesEffect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodesA study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structuresCarrier distributions in InGaN/GaN light-emitting diodesGrowth of non-polar InGaN quantum dots with an underlying AlN/GaN distributed Bragg reflector by metal-organic vapour phase epitaxyIndium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography
P50
Q30866715-124CA3AF-7D48-4D63-8BDA-A6B524B20E11Q33621652-0173FA3C-092B-4B87-A340-A1A2180031FAQ35618438-AE26387A-98F1-48F0-878D-8CB555044332Q35879622-7988A269-3422-4A88-BB96-BDBB2B77BA4AQ37450786-8CEC0EB7-C111-43F2-B59C-3E2CDC08A912Q39836011-5418DCC4-B6EF-450E-8B4A-97AC21E6FA7EQ41557149-3124D605-95A1-4818-81ED-8914F6D93557Q41574573-841917BB-D1C4-4BBD-943A-C711A49050C5Q43124810-416C40A2-6034-40CA-9A48-485115A43AE9Q46926988-C3EF1A55-2E01-45AD-9ECA-E90026D54AB9Q52930343-43CEF61D-48B1-47DC-B2A1-9581994239BAQ53507724-34449967-FF7E-4761-8ED6-1657AB898D01Q56330162-C36602D7-1966-4B33-A846-690EA320D725Q56334322-1454CBBE-5E4C-46EC-BDF6-0167BDF1986FQ56557419-D7F4C617-2FA0-4FBB-8318-AD5A898A0ABEQ56557460-57453A0A-836D-4578-9AE6-426759AC72EBQ56557496-E7AFFFF0-AB46-476A-A6C3-A6806DD63F19Q56557508-D5C67DCC-56D6-4EE2-B07C-62290FE2AB6DQ56557568-C4B5C205-5508-4214-9ED8-058353BC34E0Q56557600-5BE3274B-87D6-4FA6-B593-3E52EB5CE9BDQ56557611-2EA2837A-7A13-4362-A256-A43AF56D93ECQ56557628-3BFFA1E3-C116-47FB-9C11-AE84280A5D0AQ56557680-5BFF6580-60D4-4B28-A3E3-AC392083742FQ56557708-B7F6763E-E898-432E-91B0-26A4C9559275Q56557725-D2D3DC0F-FED0-4C39-9023-9477A75109FEQ56557740-D46F5DD8-7B90-4C0D-A539-D09EE3E77FACQ56557764-C3BBFEF4-40C8-4485-B98A-987BE16C2E19Q56557779-9C5D40C9-6821-40EB-94D8-DA43248A294FQ56557831-DB8E7036-DA92-41B3-B951-56B37364A2CBQ56557863-D36FCC3B-4E83-431D-9599-201CD0B1AB50Q56557910-71E35799-F8B0-4272-B8A0-A56FAC9DC9C8Q56558005-581BE5A3-D5E3-4D34-9817-C311F96BAA0CQ56558101-54E382DB-4FC8-4636-A5E0-9AAB3B37AED6Q56558175-1617D81B-A07A-49EF-9788-48DC90BC7D33Q56558191-19BE2E29-F4D5-49ED-8B0E-813024208A58Q56558308-E6E63684-D2F8-4B94-8844-A28FB31DAFFDQ56558342-B56CB043-1E5C-4739-BE09-C5FB4242D838Q56558372-841D7FCD-AF60-44E1-9F92-4E6D41EA5038Q56558427-A7D8DC04-6228-403C-AB26-32C5654D120AQ56558459-76F92997-B24A-4091-B2AE-87D26D36688C
P50
name
Menno J Kappers
@ast
Menno J Kappers
@en
Menno J Kappers
@nl
type
label
Menno J Kappers
@ast
Menno J Kappers
@en
Menno J Kappers
@nl
prefLabel
Menno J Kappers
@ast
Menno J Kappers
@en
Menno J Kappers
@nl