about
Contrast and Raman spectroscopy study of single- and few-layered charge density wave material: 2H-TaSe₂Mechanical exfoliation and characterization of single- and few-layer nanosheets of WSe₂ , TaS₂ , and TaSe₂.Nonblinking, intense two-dimensional light emitter: monolayer WS2 triangles.Visualization of arrangements of carbon atoms in graphene layers by Raman mapping and atomic-resolution TEM.Stacking-dependent optical conductivity of bilayer graphene.Room-temperature 2D semiconductor activated vertical-cavity surface-emitting lasers.Raman spectroscopy study of lattice vibration and crystallographic orientation of monolayer MoS2 under uniaxial strain.Hysteresis of electronic transport in graphene transistors.Raman characterization of ABA- and ABC-stacked trilayer graphene.Fabrication of Co3O4-reduced graphene oxide scrolls for high-performance supercapacitor electrodes.Second-order overtone and combination Raman modes of graphene layers in the range of 1690-2150 cm(-1).Self-limited oxidation: a route to form graphene layers from graphite by one-step heating.Raman study on the g mode of graphene for determination of edge orientation.1T' Transition Metal Telluride Atomic Layers for Plasmon-Free SERS at Femtomolar LevelsZone folding effect in RamanG-band intensity of twisted bilayer grapheneRaman spectra of out-of-plane phonons in bilayer graphenePhotovoltage Reversal in Organic Optoelectronic Devices with Insulator-Semiconductor InterfacesThickness-dependent patterning of MoS2 sheets with well-oriented triangular pits by heating in airA general strategy toward graphene@metal oxide core–shell nanostructures for high-performance lithium storagePrecise Layer Control of MoTe2 by Ozone Treatment.Vapor-liquid-solid growth of large-area multilayer hexagonal boron nitride on dielectric substratesHigh-Performance WSe2 Photodetector Based on a Laser-Induced p-n JunctionDirect Observation of the Linear Dichroism Transition in Two-Dimensional Palladium Diselenide
P50
Q30449580-52038C4D-D96D-4049-B057-0FC5BB1FAFA8Q34529376-90BC2CB4-0662-4D89-9996-C42088F2A210Q35050870-5DC1CD9F-A36C-4907-9237-7CAB58803A86Q36579802-8A5C8CD9-9B06-428D-814E-C87A5815AF1AQ39867642-28592DCA-84E5-4C7B-B574-70FF2556ED7DQ41049858-6D314FB9-555F-4E65-ABE3-AC715FDEF141Q46034240-3FA123D5-B8A2-4038-9F34-9A9EDFAED994Q51031735-F941B4F9-786B-4080-9761-503FA64FDEB9Q51527326-6B0C60CB-31FB-428B-8043-9D0DFFA6EA2FQ51550418-8337F91D-A27F-4FA8-92DC-AC3F0E5E51CFQ51600044-E51B5674-2F92-4AF1-99FE-688999056882Q51638617-316C65B0-75E2-4A53-833A-6817D1D0C3A7Q51699697-09CAE63C-9F52-488A-981B-F266CC95324EQ57127429-E60894BF-73A5-4413-A518-D58AAF4D47DBQ57707552-35AD4557-1907-4518-B3E9-EC7FD679C744Q57707556-772A8235-9C69-46BA-BF96-371B177D0426Q58702577-E621D926-9D0B-4959-9CCC-317946789770Q59813032-84B72D00-2A95-4E6B-BB2B-CB4B6D27C896Q62119803-0BE6FD92-FE8F-447A-9C7E-99165AB7BE1AQ64915514-8A1068EA-CE83-473E-8179-9DB66D401C29Q89686179-C169CFCA-A930-46C5-B232-6039DA1C36E9Q90978660-97BAABAF-20E9-4AFA-898E-232B91C9CF44Q92682253-FA7D1349-B02D-47C0-BA54-5225181554A9
P50
description
onderzoeker
@nl
researcher
@en
հետազոտող
@hy
name
Chunxiao Cong
@ast
Chunxiao Cong
@en
Chunxiao Cong
@es
Chunxiao Cong
@nl
type
label
Chunxiao Cong
@ast
Chunxiao Cong
@en
Chunxiao Cong
@es
Chunxiao Cong
@nl
prefLabel
Chunxiao Cong
@ast
Chunxiao Cong
@en
Chunxiao Cong
@es
Chunxiao Cong
@nl
P106
P108
P1153
14031138800
P31
P496
0000-0001-9786-825X