Hysteresis of electronic transport in graphene transistors.
about
Extraordinary linear dynamic range in laser-defined functionalized graphene photodetectors.Few-layer HfS2 transistors.Substrate engineering by hexagonal boron nitride/SiO2 for hysteresis-free graphene FETs and large-scale graphene p-n junctions.Graphene mobility mappingCVD growth of large area smooth-edged graphene nanomesh by nanosphere lithographyEnvironmental Effects on Hysteresis of Transfer Characteristics in Molybdenum Disulfide Field-Effect Transistors.Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition.Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors.Hybrid graphene plasmonic waveguide modulators.Ferroelectric memory based on nanostructures.A review of carbon nanotube- and graphene-based flexible thin-film transistors.Electronic and optical properties of graphene nanoribbons in external fields.Eliminating Overerase Behavior by Designing Energy Band in High-Speed Charge-Trap Memory Based on WSe2.Ultrahigh Responsivity in Graphene-ZnO Nanorod Hybrid UV Photodetector.Piezoelectric coupling in a field-effect transistor with a nanohybrid channel of ZnO nanorods grown vertically on graphene.Quantitatively estimating defects in graphene devices using discharge current analysis method.Versatile sputtering technology for Al2O3 gate insulators on grapheneContact Resistance and Channel Conductance of Graphene Field-Effect Transistors under Low-Energy Electron IrradiationUltraviolet irradiation-controlled memory effect in graphene field-effect transistors.Fully inkjet-printed two-dimensional material field-effect heterojunctions for wearable and textile electronics.Anisotropic Black Phosphorus Synaptic Device for Neuromorphic Applications.A ferroelectric relaxor polymer-enhanced p-type WSe2 transistor.Fast and Highly Sensitive Ionic-Polymer-Gated WS2 -Graphene Photodetectors.Time-dependent transport characteristics of graphene tuned by ferroelectric polarization and interface charge trapping.Charge trap memory based on few-layer black phosphorus.Quantum Conductance Probing of Oxygen Vacancies in SrTiO3 Epitaxial Thin Film using Graphene.Room-Temperature Quantum Transport Signatures in Graphene/LaAlO3 /SrTiO3 Heterostructures.Touch stimulated pulse generation in biomimetic single-layer graphene.High-quality infrared imaging with graphene photodetectors at room temperature.Lateral graphene p-n junctions formed by the graphene/MoS₂ hybrid interface.A solid dielectric gated graphene nanosensor in electrolyte solutions.Self-biased reconfigurable graphene stacks for terahertz plasmonics.Metal-etching-free direct delamination and transfer of single-layer graphene with a high degree of freedom.Detection of Sub-fM DNA with Target Recycling and Self-Assembly Amplification on Graphene Field-Effect Biosensors.Wafer scale BN on sapphire substrates for improved graphene transport.Multilayer Black Phosphorus Near-Infrared Photodetectors.Electric field effect in ultrathin black phosphorusHighly air stable passivation of graphene based field effect devicesThermally activated hysteresis in high quality graphene/h-BN devicesConversion of Multi-layered MoTe Transistor Between P-Type and N-Type and Their Use in Inverter
P2860
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P2860
Hysteresis of electronic transport in graphene transistors.
description
2010 nî lūn-bûn
@nan
2010年の論文
@ja
2010年学术文章
@wuu
2010年学术文章
@zh
2010年学术文章
@zh-cn
2010年学术文章
@zh-hans
2010年学术文章
@zh-my
2010年学术文章
@zh-sg
2010年學術文章
@yue
2010年學術文章
@zh-hant
name
Hysteresis of electronic transport in graphene transistors.
@en
Hysteresis of electronic transport in graphene transistors.
@nl
type
label
Hysteresis of electronic transport in graphene transistors.
@en
Hysteresis of electronic transport in graphene transistors.
@nl
prefLabel
Hysteresis of electronic transport in graphene transistors.
@en
Hysteresis of electronic transport in graphene transistors.
@nl
P50
P356
P1433
P1476
Hysteresis of electronic transport in graphene transistors
@en
P2093
Jingzhi Shang
P304
P356
10.1021/NN101950N
P407
P577
2010-11-03T00:00:00Z