Impact of the capping layers on lateral confinement in InAs∕InP quantum dots for 1.55μm laser applications studied by magnetophotoluminescence
about
Impact of the capping layers on lateral confinement in InAs∕InP quantum dots for 1.55μm laser applications studied by magnetophotoluminescence
description
im Dezember 2005 veröffentlichter wissenschaftlicher Artikel
@de
wetenschappelijk artikel
@nl
наукова стаття, опублікована в грудні 2005
@uk
name
Impact of the capping layers o ...... ed by magnetophotoluminescence
@en
Impact of the capping layers o ...... ed by magnetophotoluminescence
@nl
type
label
Impact of the capping layers o ...... ed by magnetophotoluminescence
@en
Impact of the capping layers o ...... ed by magnetophotoluminescence
@nl
prefLabel
Impact of the capping layers o ...... ed by magnetophotoluminescence
@en
Impact of the capping layers o ...... ed by magnetophotoluminescence
@nl
P2093
P2860
P50
P356
P1476
Impact of the capping layers o ...... ed by magnetophotoluminescence
@en
P2093
A. Le Corre
C. Levallois
H. Folliot
S. Loualiche
P2860
P304
P356
10.1063/1.2132527
P407
P577
2005-12-05T00:00:00Z