Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics
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Elasticity of MoS2 Sheets by Mechanical Deformation Observed by in Situ Electron MicroscopyA Self-Limiting Electro-Ablation Technique for the Top-Down Synthesis of Large-Area Monolayer Flakes of 2D Materials.Charge transport in ion-gated mono-, bi-, and trilayer MoS2 field effect transistors.A microprocessor based on a two-dimensional semiconductorA Sputtered Silicon Oxide Electrolyte for High-Performance Thin-Film Transistors.Highly Oriented Atomically Thin Ambipolar MoSe2 Grown by Molecular Beam Epitaxy.Novel field-effect Schottky barrier transistors based on graphene-MoS2 heterojunctions.Fabrication of WS2/GaN p-n Junction by Wafer-Scale WS2 Thin Film Transfer.Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics.Influence of post-annealing on the off current of MoS2 field-effect transistorsMultiple MoS2 Transistors for Sensing Molecule Interaction Kinetics.Revealing silent vibration modes of nanomaterials by detecting anti-Stokes hyper-Raman scattering with femtosecond laser pulses.Exfoliated MoS2 in Water without AdditivesLithium-ion-based solid electrolyte tuning of the carrier density in grapheneElectrical Double Layer Capacitance in a Graphene-embedded Al2O3 Gate DielectricMoS2 Surface Structure Tailoring via Carbonaceous Promoter.Selective decoration of Au nanoparticles on monolayer MoS2 single crystals.Environmental Effects on Hysteresis of Transfer Characteristics in Molybdenum Disulfide Field-Effect Transistors.Surface enhanced Raman scattering of monolayer MX2 with metallic nano particles.Room temperature rubbing for few-layer two-dimensional thin flakes directly on flexible polymer substrates.Proton Conducting Graphene Oxide/Chitosan Composite Electrolytes as Gate Dielectrics for New-Concept Devices.Monolayer optical memory cells based on artificial trap-mediated charge storage and release.Electric-double-layer field-effect transistors with ionic liquids.Photocurrent generation with two-dimensional van der Waals semiconductors.Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects.Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors.Progress of Large-Scale Synthesis and Electronic Device Application of Two-Dimensional Transition Metal Dichalcogenides.Growth, structure and stability of sputter-deposited MoS2 thin films.Chalcogenoether complexes of Nb(v) thio- and seleno-halides as single source precursors for low pressure chemical vapour deposition of NbS2 and NbSe2 thin films.Recent Advances in Doping of Molybdenum Disulfide: Industrial Applications and Future Prospects.Two-dimensional inorganic analogues of graphene: transition metal dichalcogenides.Effect of contaminations and surface preparation on the work function of single layer MoS2.Flexible and stretchable thin-film transistors based on molybdenum disulphide.Flexible Device Applications of 2D Semiconductors.Enhanced second harmonic generation of MoS2 layers on a thin gold film.Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films.Transparent Thin-Film Transistors Based on Sputtered Electric Double Layer.Self-propelled ion gel at air-water interfaceArea Selective Growth of Titanium Diselenide Thin Films into Micropatterned Substrates by Low-Pressure Chemical Vapor Deposition.Order-disorder phase transitions in the two-dimensional semiconducting transition metal dichalcogenide alloys Mo(1-x)W(x)X₂ (X = S, Se, and Te).
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P2860
Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics
description
article
@en
im Juli 2012 veröffentlichter wissenschaftlicher Artikel
@de
wetenschappelijk artikel
@nl
наукова стаття, опублікована в липні 2012
@uk
name
Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics
@en
Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics
@nl
type
label
Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics
@en
Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics
@nl
prefLabel
Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics
@en
Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics
@nl
P2093
P356
P1433
P1476
Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics
@en
P2093
Keng-Ku Liu
Taishi Takenobu
Yohei Yomogida
Yoshihiro Iwasa
P304
P356
10.1021/NL301335Q
P407
P50
P577
2012-07-18T00:00:00Z