Highly Oriented Atomically Thin Ambipolar MoSe2 Grown by Molecular Beam Epitaxy.
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Highly Oriented Atomically Thin Ambipolar MoSe2 Grown by Molecular Beam Epitaxy.
description
2017 nî lūn-bûn
@nan
2017 թուականի Մայիսին հրատարակուած գիտական յօդուած
@hyw
2017 թվականի մայիսին հրատարակված գիտական հոդված
@hy
2017年の論文
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2017年論文
@yue
2017年論文
@zh-hant
2017年論文
@zh-hk
2017年論文
@zh-mo
2017年論文
@zh-tw
2017年论文
@wuu
name
Highly Oriented Atomically Thin Ambipolar MoSe2 Grown by Molecular Beam Epitaxy.
@ast
Highly Oriented Atomically Thin Ambipolar MoSe2 Grown by Molecular Beam Epitaxy.
@en
type
label
Highly Oriented Atomically Thin Ambipolar MoSe2 Grown by Molecular Beam Epitaxy.
@ast
Highly Oriented Atomically Thin Ambipolar MoSe2 Grown by Molecular Beam Epitaxy.
@en
prefLabel
Highly Oriented Atomically Thin Ambipolar MoSe2 Grown by Molecular Beam Epitaxy.
@ast
Highly Oriented Atomically Thin Ambipolar MoSe2 Grown by Molecular Beam Epitaxy.
@en
P2093
P2860
P50
P356
P1433
P1476
Highly Oriented Atomically Thin Ambipolar MoSe2 Grown by Molecular Beam Epitaxy
@en
P2093
Dmitry Ovchinnikov
Michael Brian Whitwick
Michele Pizzochero
Ming-Wei Chen
Oriol Lopez Sanchez
Philippe Gillet
Sorin Lazar
P2860
P304
P356
10.1021/ACSNANO.7B02726
P407
P577
2017-05-26T00:00:00Z
P698
P818
1705.10563