Strain solitons and topological defects in bilayer grapheneOne-dimensional electrical contact to a two-dimensional material.In-Plane Anisotropy in Mono- and Few-Layer ReS2 Probed by Raman Spectroscopy and Scanning Transmission Electron Microscopy.Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide.Engineering the Structural and Electronic Phases of MoTe2 through W Substitution.Energy Transfer from Quantum Dots to Graphene and MoS2: The Role of Absorption and Screening in Two-Dimensional Materials.Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform.Graphene kirigami.Strain Modulation of Graphene by Nanoscale Substrate Curvatures: A Molecular View.Softened elastic response and unzipping in chemical vapor deposition graphene membranes.Tailoring the electronic structure in bilayer molybdenum disulfide via interlayer twist.High thermal conductivity in cubic boron arsenide crystalsUnusual high thermal conductivity in boron arsenide bulk crystalsGrains and grain boundaries in single-layer graphene atomic patchwork quiltsTailoring Electrical Transport Across Grain Boundaries in Polycrystalline GrapheneChemical Vapor Deposition-Derived Graphene with Electrical Performance of Exfoliated GrapheneDirect Imaging of a Two-Dimensional Silica Glass on GrapheneUltrathin Oxide Films by Atomic Layer Deposition on GraphenePreparation of Nonprecious Metal Electrocatalysts for the Reduction of Oxygen Using a Low-Temperature Sacrificial MetalUltrasoft slip-mediated bending in few-layer grapheneDeep Learning Enabled Strain Mapping of Single-Atom Defects in Two-Dimensional Transition Metal Dichalcogenides with Sub-Picometer PrecisionAuthor Correction: Ultrasoft slip-mediated bending in few-layer grapheneStochastic Stress Jumps Due to Soliton Dynamics in Two-Dimensional van der Waals InterfacesQuantitative Imaging of Organic Ligand Density on Anisotropic Inorganic Nanocrystals
P50
Q30541421-1F78EB23-364E-4403-BF74-73688D39099BQ34381846-6E31807D-78C8-4078-A015-5DB6EDB9858DQ46104623-C58668A1-9A4B-4523-BB9C-29B38C5A3D21Q46216920-D567A17E-01D1-48D0-BFF0-735A8008BD99Q46506635-94E3DC92-D864-4BE3-8ED7-56DBF010F319Q46839459-37C3CF89-1884-4E54-A921-E053FF460E1CQ48195756-26A2ADD6-F7EC-4F66-923D-065C12D44621Q51829591-2A75F43F-33BF-452B-A01C-19F53B99EA40Q52374219-8867FA14-3946-4425-B921-3E89276A6226Q53427170-80F2A998-FC1A-4D80-931A-F35F1D84A0C7Q53524433-4617C8CF-B6ED-4D3A-8A19-65E717AA8495Q56593263-F8FB65A7-BF35-4711-BFE9-461CF45747D9Q56593264-26D7209F-2965-4D51-A6AF-83F70FCB4C3BQ59063511-37814FC2-1F38-4592-852D-23B30C9767D5Q59191412-AD268F2C-55AC-421B-8ADF-23FC576FC631Q59191424-89664C9E-95C5-4A57-999A-4DEAA2D673CEQ59191425-41E3C9C7-92EB-4EC4-879E-9AAC34AF8C99Q59191436-7E5F3708-A880-457D-AC67-14B66F2B8ADAQ89971716-3167244B-EDAC-4A7D-B59E-815DE08AD717Q91236048-C4543C00-8A5D-4C19-8790-DEB072F93336Q91531216-E71733D3-CEC9-4EA6-B131-88DD87CE6FE0Q91768625-FC097601-CBB9-44E6-8EC2-B8C53FE7D954Q92682242-3950AFCE-A29D-4987-837E-379AA5EA9A42Q92694455-676F24AF-6571-4334-9BA4-577F5A2CED32
P50
description
materials scientist
@en
onderzoeker
@nl
name
Pinshane Huang
@ast
Pinshane Huang
@en
Pinshane Huang
@es
Pinshane Huang
@ga
Pinshane Huang
@nl
type
label
Pinshane Huang
@ast
Pinshane Huang
@en
Pinshane Huang
@es
Pinshane Huang
@ga
Pinshane Huang
@nl
altLabel
Pinshane Y. Huang
@en
Pinshane Yeh Huang
@en
prefLabel
Pinshane Huang
@ast
Pinshane Huang
@en
Pinshane Huang
@es
Pinshane Huang
@ga
Pinshane Huang
@nl
P1153
26423041800
P19
P1960
VGnBXzMAAAAJ
P21
P31
P496
0000-0002-1095-1833
P569
1986-07-15T00:00:00Z