Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform.
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The hot pick-up technique for batch assembly of van der Waals heterostructures.Visualizing nanoscale excitonic relaxation properties of disordered edges and grain boundaries in monolayer molybdenum disulfideThermal Conductance of the 2D MoS2/h-BN and graphene/h-BN Interfaces.Coulomb engineering of the bandgap and excitons in two-dimensional materials.Designing the shape evolution of SnSe2 nanosheets and their optoelectronic properties.Molybdenum-Bismuth Bimetallic Chalcogenide Nanosheets for Highly Efficient Electrocatalytic Reduction of Carbon Dioxide to Methanol.Polaritons in layered two-dimensional materials.K2 ZnSn3 Se8 : A Non-Centrosymmetric Zinc Selenidostannate(IV) Featuring Interesting Covalently Bonded [ZnSn3 Se8 ]2- Layer and Exhibiting Intriguing Second Harmonic Generation Activity.Misorientation-angle-dependent electrical transport across molybdenum disulfide grain boundariesProtecting the properties of monolayer MoS₂ on silicon based substrates with an atomically thin buffer.Synthesis and characterization of vertically standing MoS2 nanosheets.Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations.Electronic and magnetic properties of Co doped MoS2 monolayer.Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier.High Quality Factor Mechanical Resonators Based on WSe2 Monolayers.Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratioEven-odd layer-dependent magnetotransport of high-mobility Q-valley electrons in transition metal disulfides.A two-dimensional spin field-effect switch.Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures.Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects.A Simple Method for Synthesis of High-Quality Millimeter-Scale 1T' Transition-Metal Telluride and Near-Field Nanooptical Properties.Electrical contacts to two-dimensional semiconductors.Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors.Highly Sensitive MoS2 Humidity Sensors Array for Noncontact Sensation.Progress on Electronic and Optoelectronic Devices of 2D Layered Semiconducting Materials.High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se.Surface Charge Transfer Doping of Low-Dimensional Nanostructures toward High-Performance Nanodevices.Solution-Processed Two-Dimensional Metal Dichalcogenide-Based Nanomaterials for Energy Storage and Conversion.Single- and few-layer WTe2 and their suspended nanostructures: Raman signatures and nanomechanical resonances.Electromechanical coupling and design considerations in single-layer MoS2 suspended-channel transistors and resonators.Synthesis, structure and applications of graphene-based 2D heterostructures.Tunable and laser-reconfigurable 2D heterocrystals obtained by epitaxial stacking of crystallographically incommensurate Bi2Se3 and MoS2 atomic layers.HfSe2 and ZrSe2: Two-dimensional semiconductors with native high-κ oxides.Direct observation of multiple rotational stacking faults coexisting in freestanding bilayer MoS2.A Highly Sensitive Nonenzymatic Glucose Biosensor Based on the Regulatory Effect of Glucose on Electrochemical Behaviors of Colloidal Silver Nanoparticles on MoS₂†Ultrahigh mobility and efficient charge injection in monolayer organic thin-film transistors on boron nitride.Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction.Split-gated point-contact for electrostatic confinement of transport in MoS2/h-BN hybrid structures.Understanding contact gating in Schottky barrier transistors from 2D channels.Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor
P2860
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P2860
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform.
description
2015 nî lūn-bûn
@nan
2015年の論文
@ja
2015年学术文章
@wuu
2015年学术文章
@zh-cn
2015年学术文章
@zh-hans
2015年学术文章
@zh-my
2015年学术文章
@zh-sg
2015年學術文章
@yue
2015年學術文章
@zh
2015年學術文章
@zh-hant
name
Multi-terminal transport measu ...... terostructure device platform.
@en
Multi-terminal transport measu ...... terostructure device platform.
@nl
type
label
Multi-terminal transport measu ...... terostructure device platform.
@en
Multi-terminal transport measu ...... terostructure device platform.
@nl
prefLabel
Multi-terminal transport measu ...... terostructure device platform.
@en
Multi-terminal transport measu ...... terostructure device platform.
@nl
P2093
P50
P356
P1476
Multi-terminal transport measu ...... terostructure device platform.
@en
P2093
Bjarke S Jessen
Chul-Ho Lee
Daniel A Chenet
Filippo Pizzocchero
Ghidewon Arefe
Xian Zhang
P2888
P304
P356
10.1038/NNANO.2015.70
P407
P50
P577
2015-04-27T00:00:00Z
P5875
P6179
1025131511