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Integrated III-V Photonic Crystal--Si waveguide platform with tailored optomechanical coupling.Dense arrays of ordered pyramidal quantum dots with narrow linewidth photoluminescence spectra.Highly Oriented Atomically Thin Ambipolar MoSe2 Grown by Molecular Beam Epitaxy.Probing the Interlayer Exciton Physics in a MoS2/MoSe2/MoS2 van der Waals Heterostructure.Defect Healing and Charge Transfer-Mediated Valley Polarization in MoS2/MoSe2/MoS2 Trilayer van der Waals Heterostructures.Unraveling the Exciton Binding Energy and the Dielectric Constant in Single-Crystal Methylammonium Lead Triiodide Perovskite.Revealing Large-Scale Homogeneity and Trace Impurity Sensitivity of GaAs Nanoscale Membranes.Spatially resolved studies of the phases and morphology of methylammonium and formamidinium lead tri-halide perovskites.Observation of A Raman mode splitting in few layer black phosphorus encapsulated with hexagonal boron nitride.Site-selective measurement of coupled spin pairs in an organic semiconductor.Dark excitons and the elusive valley polarization in transition metal dichalcogenidesMagnetoexcitons in large area CVD-grown monolayerMoS2andMoSe2on sapphireImpact of microstructure on the electron–hole interaction in lead halide perovskitesExcitons in atomically thin black phosphorusOnset of exciton-exciton annihilation in single-layer black phosphorusExcitonic Properties of Low-Band-Gap Lead–Tin Halide PerovskitesOrdered systems of site-controlled pyramidal quantum dots incorporated in photonic crystal cavitiesMoiré Intralayer Excitons in a MoSe2/MoS2 HeterostructureIntervalley Scattering of Interlayer Excitons in a MoS2/MoSe2/MoS2 Heterostructure in High Magnetic FieldGiant Fine Structure Splitting of the Bright Exciton in a Bulk MAPbBr3 Single Crystal
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Q30398515-3475D776-5361-4B90-A6D1-60A35F65297BQ33504511-FBC6E01B-0D52-4E49-A181-871B93DAFE4CQ33856684-B97FAF14-889B-4675-8AD0-B1AB64B80A0EQ47685652-98A7448B-AE30-431C-9570-029327D99A92Q48028023-1FE3F10C-0F6C-4BE4-B571-071CA2B071DDQ48042017-BA401544-71A1-4DB2-9B36-22C662EC3791Q48062966-5D234BCF-9335-49F7-BD05-E0B2A6ACD3C3Q48744960-56922807-7E82-4AB1-BB17-3ABB4365101EQ49383322-03793F74-B81B-46DF-BF9C-D782A4FBF74CQ52803509-BF3D85EE-6B2F-415B-8300-93F0FA130D16Q59309481-A793C560-7F00-4E11-A62B-AFDF97C5C107Q59309497-0F29B722-C94A-46D2-9F98-5DA0C6D96C1CQ59659193-31F98545-36E7-4D66-9EF4-B95470D036D6Q59659196-2FBCA62E-214D-4533-AC66-10B0B8EFBDCAQ59659206-51A1CD01-3CCD-4EB6-A121-1CD96F11C3AAQ62049827-0E362A2E-8214-4913-A84F-89A0681F4B13Q62269661-1AEF7AC6-7843-40EB-A9E3-7B4D4CDBB021Q64017542-90062E46-84B4-45C5-92F3-BB70E0952982Q88783582-4CACA7FD-6E5A-48F2-979B-B5932841C616Q93182396-41E0EDAC-69FF-4FA9-80CF-99265F2B8107
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description
onderzoeker
@nl
researcher ORCID ID = 0000-0003-4078-4965
@en
name
Alessandro Surrente
@ast
Alessandro Surrente
@en
Alessandro Surrente
@es
Alessandro Surrente
@nl
type
label
Alessandro Surrente
@ast
Alessandro Surrente
@en
Alessandro Surrente
@es
Alessandro Surrente
@nl
prefLabel
Alessandro Surrente
@ast
Alessandro Surrente
@en
Alessandro Surrente
@es
Alessandro Surrente
@nl
P106
P21
P31
P496
0000-0003-4078-4965