Suboxide interface in disproportionatinga-SiO studied by x-ray Raman scattering
about
Atomic-scale disproportionation in amorphous silicon monoxide.Reexamining the Lyman-Birge-Hopfield band of N2Spectroscopy of low and intermediateZelements at extreme conditions:in situstudies of Earth materials at pressure and temperature via X-ray Raman scatteringInelastic X-ray scattering and vibrational effects at the K-edges of gaseous N2, N2O, and CO2
P2860
Suboxide interface in disproportionatinga-SiO studied by x-ray Raman scattering
description
im Mai 2010 veröffentlichter wissenschaftlicher Artikel
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wetenschappelijk artikel
@nl
наукова стаття, опублікована в травні 2010
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name
Suboxide interface in disproportionatinga-SiO studied by x-ray Raman scattering
@en
Suboxide interface in disproportionatinga-SiO studied by x-ray Raman scattering
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type
label
Suboxide interface in disproportionatinga-SiO studied by x-ray Raman scattering
@en
Suboxide interface in disproportionatinga-SiO studied by x-ray Raman scattering
@nl
prefLabel
Suboxide interface in disproportionatinga-SiO studied by x-ray Raman scattering
@en
Suboxide interface in disproportionatinga-SiO studied by x-ray Raman scattering
@nl
P2093
P2860
P1433
P1476
Suboxide interface in disproportionatinga-SiO studied by x-ray Raman scattering
@en
P2093
Ch. J. Sahle
F. Djurabekova
G. T. Seidler
H. Sternemann
O. M. Feroughi
P2860
P356
10.1103/PHYSREVB.81.205317
P407
P577
2010-05-21T00:00:00Z