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Q33856684-074F183F-AF15-47C5-BA23-65C9B5B811DE
Q33856684-074F183F-AF15-47C5-BA23-65C9B5B811DE
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Statement
http://www.wikidata.org/entity/statement/Q33856684-074F183F-AF15-47C5-BA23-65C9B5B811DE
Highly Oriented Atomically Thin Ambipolar MoSe2 Grown by Molecular Beam Epitaxy.
P2860
Q33856684-074F183F-AF15-47C5-BA23-65C9B5B811DE
BestRank
Statement
http://www.wikidata.org/entity/statement/Q33856684-074F183F-AF15-47C5-BA23-65C9B5B811DE
rank
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wasDerivedFrom
f857effb3dfa73f73e6cba2e426ad8a504ebbcf4
P2860
Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene.