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Q35613164-5F0F1707-737D-4E5A-9850-5982A9B6CA26
Q35613164-5F0F1707-737D-4E5A-9850-5982A9B6CA26
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http://www.wikidata.org/entity/statement/Q35613164-5F0F1707-737D-4E5A-9850-5982A9B6CA26
Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta2O5-Ta system.
P2860
Q35613164-5F0F1707-737D-4E5A-9850-5982A9B6CA26
BestRank
Statement
http://www.wikidata.org/entity/statement/Q35613164-5F0F1707-737D-4E5A-9850-5982A9B6CA26
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1805fe75c0638aa7480e163fed0d4fcf8e8b9303
P2860
Complementary resistive switches for passive nanocrossbar memories