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Q36018657-4E1F149D-A170-455F-93E0-F94F2EBCC727
Q36018657-4E1F149D-A170-455F-93E0-F94F2EBCC727
BestRank
Statement
http://www.wikidata.org/entity/statement/Q36018657-4E1F149D-A170-455F-93E0-F94F2EBCC727
Pressure induced metallization with absence of structural transition in layered molybdenum diselenide.
P2860
Q36018657-4E1F149D-A170-455F-93E0-F94F2EBCC727
BestRank
Statement
http://www.wikidata.org/entity/statement/Q36018657-4E1F149D-A170-455F-93E0-F94F2EBCC727
rank
NormalRank
type
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Statement
wasDerivedFrom
84b36e9edcd09b69ecd13dddbd4355c98b5862f8
P2860
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor