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Q37014906-0558D81A-33C1-47AE-A7A8-4C625D18A158
Q37014906-0558D81A-33C1-47AE-A7A8-4C625D18A158
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http://www.wikidata.org/entity/statement/Q37014906-0558D81A-33C1-47AE-A7A8-4C625D18A158
Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.
P2860
Q37014906-0558D81A-33C1-47AE-A7A8-4C625D18A158
BestRank
Statement
http://www.wikidata.org/entity/statement/Q37014906-0558D81A-33C1-47AE-A7A8-4C625D18A158
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41ce90d0f2ea38d0d13be6e0226ff0adf1e6441f
P2860
Impact of carbon and nitrogen impurities in high-κ dielectrics on metal-oxide-semiconductor devices