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Q37014906-7C2BFF92-1AEA-44E9-8A92-FB75E07B3E04
Q37014906-7C2BFF92-1AEA-44E9-8A92-FB75E07B3E04
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http://www.wikidata.org/entity/statement/Q37014906-7C2BFF92-1AEA-44E9-8A92-FB75E07B3E04
Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.
P2860
Q37014906-7C2BFF92-1AEA-44E9-8A92-FB75E07B3E04
BestRank
Statement
http://www.wikidata.org/entity/statement/Q37014906-7C2BFF92-1AEA-44E9-8A92-FB75E07B3E04
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16efb73b30c2e00b2c5996fb39b61c68b2212581
P2860
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory.