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Q37014906-9B6A39F6-3700-4C48-AF61-88FE5DB5A466
Q37014906-9B6A39F6-3700-4C48-AF61-88FE5DB5A466
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http://www.wikidata.org/entity/statement/Q37014906-9B6A39F6-3700-4C48-AF61-88FE5DB5A466
Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.
P2860
Q37014906-9B6A39F6-3700-4C48-AF61-88FE5DB5A466
BestRank
Statement
http://www.wikidata.org/entity/statement/Q37014906-9B6A39F6-3700-4C48-AF61-88FE5DB5A466
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41ce90d0f2ea38d0d13be6e0226ff0adf1e6441f
P2860
A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope