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Q37014906-9E7A2C1A-11A8-487C-A10A-901293618479
Q37014906-9E7A2C1A-11A8-487C-A10A-901293618479
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http://www.wikidata.org/entity/statement/Q37014906-9E7A2C1A-11A8-487C-A10A-901293618479
Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.
P2860
Q37014906-9E7A2C1A-11A8-487C-A10A-901293618479
BestRank
Statement
http://www.wikidata.org/entity/statement/Q37014906-9E7A2C1A-11A8-487C-A10A-901293618479
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50a2ba25990e22ada9c8e73b45bcfc4b7b64aea4
P2860
Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance