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Q37359692-D6B8BD4B-F6C1-435B-8B2B-6B378A344D54
Q37359692-D6B8BD4B-F6C1-435B-8B2B-6B378A344D54
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http://www.wikidata.org/entity/statement/Q37359692-D6B8BD4B-F6C1-435B-8B2B-6B378A344D54
Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials.
P2860
Q37359692-D6B8BD4B-F6C1-435B-8B2B-6B378A344D54
BestRank
Statement
http://www.wikidata.org/entity/statement/Q37359692-D6B8BD4B-F6C1-435B-8B2B-6B378A344D54
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d3155b4325c17c94ec83a080d46427b391986979
P2860
Effect of non-lattice oxygen on ZrO2-based resistive switching memory.