Effect of non-lattice oxygen on ZrO2-based resistive switching memory.
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Charge transport mechanisms and memory effects in amorphous TaNx thin filmsEnhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte.Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface.Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migration.Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials.Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrOx/GdOx/W cross-point memories.Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface.Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaO x interface.Compliance-Free ZrO2/ZrO2 - x /ZrO2 Resistive Memory with Controllable Interfacial Multistate Switching Behaviour.
P2860
Q33592627-98876D96-9592-4F86-B431-4F99CAF4713CQ34468259-71AEE462-24A5-4903-8D47-A7EA74EF9D5DQ36218166-02F9FB01-093F-4464-BDC8-0F34F850F0CCQ36940374-DAF8D643-654D-4C20-80BA-F9C2E14301C8Q37359692-D6B8BD4B-F6C1-435B-8B2B-6B378A344D54Q37497893-77DA7996-8508-486D-86D8-A3989D4466D7Q37716182-5D858D05-68D2-4475-A791-A0FB5498519EQ37723457-26DBFB48-4CD2-49DF-A8E7-91C131588485Q42224641-7430EEDC-3B2C-4C47-9AC3-0C43596A561C
P2860
Effect of non-lattice oxygen on ZrO2-based resistive switching memory.
description
2012 nî lūn-bûn
@nan
2012年の論文
@ja
2012年論文
@yue
2012年論文
@zh-hant
2012年論文
@zh-hk
2012年論文
@zh-mo
2012年論文
@zh-tw
2012年论文
@wuu
2012年论文
@zh
2012年论文
@zh-cn
name
Effect of non-lattice oxygen on ZrO2-based resistive switching memory.
@ast
Effect of non-lattice oxygen on ZrO2-based resistive switching memory.
@en
type
label
Effect of non-lattice oxygen on ZrO2-based resistive switching memory.
@ast
Effect of non-lattice oxygen on ZrO2-based resistive switching memory.
@en
prefLabel
Effect of non-lattice oxygen on ZrO2-based resistive switching memory.
@ast
Effect of non-lattice oxygen on ZrO2-based resistive switching memory.
@en
P2093
P2860
P356
P1476
Effect of non-lattice oxygen on ZrO2-based resistive switching memory.
@en
P2093
Chu-Hsuan Lin
Chun-Chieh Lin
Huei-Bo Lin
Yi-Peng Chang
P2860
P2888
P356
10.1186/1556-276X-7-187
P577
2012-03-14T00:00:00Z
P6179
1030804098