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Q37497893-6FD83B58-E399-42B8-A40E-FC065A1EBCA6
Q37497893-6FD83B58-E399-42B8-A40E-FC065A1EBCA6
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http://www.wikidata.org/entity/statement/Q37497893-6FD83B58-E399-42B8-A40E-FC065A1EBCA6
Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrOx/GdOx/W cross-point memories.
P2860
Q37497893-6FD83B58-E399-42B8-A40E-FC065A1EBCA6
BestRank
Statement
http://www.wikidata.org/entity/statement/Q37497893-6FD83B58-E399-42B8-A40E-FC065A1EBCA6
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a54f11f671e912f4329d49c2fbd1cbbace8e1aec
P2860
Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials.