Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrOx/GdOx/W cross-point memories.
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Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrOx/GdOx/W cross-point memories.
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article científic
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article scientifique
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articolo scientifico
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artigo científico
@pt
bilimsel makale
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scientific article published on 08 January 2014
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vedecký článok
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vetenskaplig artikel
@sv
videnskabelig artikel
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vědecký článek
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name
Enhanced resistive switching p ...... x/GdOx/W cross-point memories.
@en
Enhanced resistive switching p ...... x/GdOx/W cross-point memories.
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label
Enhanced resistive switching p ...... x/GdOx/W cross-point memories.
@en
Enhanced resistive switching p ...... x/GdOx/W cross-point memories.
@nl
prefLabel
Enhanced resistive switching p ...... x/GdOx/W cross-point memories.
@en
Enhanced resistive switching p ...... x/GdOx/W cross-point memories.
@nl
P2093
P2860
P356
P1476
Enhanced resistive switching p ...... x/GdOx/W cross-point memories.
@en
P2093
Amit Prakash
Debanjan Jana
Hsien-Chin Chiu
Siddheswar Maikap
Yi-Yan Chen
P2860
P2888
P356
10.1186/1556-276X-9-12
P50
P577
2014-01-08T00:00:00Z
P5875
P6179
1033742532