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Q50689882-D0CDFB6F-41CB-4DE4-8A3C-246C16567B51
Q50689882-D0CDFB6F-41CB-4DE4-8A3C-246C16567B51
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http://www.wikidata.org/entity/statement/Q50689882-D0CDFB6F-41CB-4DE4-8A3C-246C16567B51
High-efficiency bulk heterojunction memory devices fabricated using organometallic halide perovskite:poly(N-vinylcarbazole) blend active layers.
P2860
Q50689882-D0CDFB6F-41CB-4DE4-8A3C-246C16567B51
BestRank
Statement
http://www.wikidata.org/entity/statement/Q50689882-D0CDFB6F-41CB-4DE4-8A3C-246C16567B51
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83ead5abe9b6c0108051bde15e47f709579d4b27
P2860
6.5% efficient perovskite quantum-dot-sensitized solar cell.