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Q58337267-4B3185D1-B305-41DD-AA70-93D7737F2C23
Q58337267-4B3185D1-B305-41DD-AA70-93D7737F2C23
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http://www.wikidata.org/entity/statement/Q58337267-4B3185D1-B305-41DD-AA70-93D7737F2C23
Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states
P2860
Q58337267-4B3185D1-B305-41DD-AA70-93D7737F2C23
BestRank
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http://www.wikidata.org/entity/statement/Q58337267-4B3185D1-B305-41DD-AA70-93D7737F2C23
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674ac97d1ac68bfea65f21216760e2aafbd2ca68
P2860
Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors.