Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states
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Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states
description
article
@en
im April 2015 veröffentlichter wissenschaftlicher Artikel
@de
wetenschappelijk artikel
@nl
наукова стаття, опублікована у квітні 2015
@uk
name
Gate-modulated conductance of ...... tor and subgap impurity states
@en
Gate-modulated conductance of ...... tor and subgap impurity states
@nl
type
label
Gate-modulated conductance of ...... tor and subgap impurity states
@en
Gate-modulated conductance of ...... tor and subgap impurity states
@nl
prefLabel
Gate-modulated conductance of ...... tor and subgap impurity states
@en
Gate-modulated conductance of ...... tor and subgap impurity states
@nl
P2093
P2860
P50
P356
P1476
Gate-modulated conductance of ...... tor and subgap impurity states
@en
P2093
Daniel Rhodes
Junjie Wang
Minh An T. Nguyen
Simin Feng
T. Taniguchi
Thomas E. Mallouk
P2860
P304
P356
10.1063/1.4918282
P407
P577
2015-04-13T00:00:00Z
P818
1505.00807