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srep28155
srep28155
https://scigraph.springernature.com/pub.10.1038/srep28155
Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.
P2888
Q37014906-2E46B789-38BE-410C-A168-B1875F0DB487
P2888
srep28155
https://scigraph.springernature.com/pub.10.1038/srep28155