Energy levels of few-electron quantum dots imaged and characterized by atomic force microscopy.
about
Simultaneous current, force and dissipation measurements on the Si(111) 7×7 surface with an optimized qPlus AFM/STM technique.Negative dissipation gradients in hysteretic materials.Probe-based measurement of lateral single-electron transfer between individual molecules.Scanning Quantum Dot Microscopy.
P2860
Energy levels of few-electron quantum dots imaged and characterized by atomic force microscopy.
description
2010 nî lūn-bûn
@nan
2010 թուականի Մայիսին հրատարակուած գիտական յօդուած
@hyw
2010 թվականի մայիսին հրատարակված գիտական հոդված
@hy
2010年の論文
@ja
2010年論文
@yue
2010年論文
@zh-hant
2010年論文
@zh-hk
2010年論文
@zh-mo
2010年論文
@zh-tw
2010年论文
@wuu
name
Energy levels of few-electron ...... ed by atomic force microscopy.
@ast
Energy levels of few-electron ...... ed by atomic force microscopy.
@en
Energy levels of few-electron ...... ed by atomic force microscopy.
@nl
type
label
Energy levels of few-electron ...... ed by atomic force microscopy.
@ast
Energy levels of few-electron ...... ed by atomic force microscopy.
@en
Energy levels of few-electron ...... ed by atomic force microscopy.
@nl
prefLabel
Energy levels of few-electron ...... ed by atomic force microscopy.
@ast
Energy levels of few-electron ...... ed by atomic force microscopy.
@en
Energy levels of few-electron ...... ed by atomic force microscopy.
@nl
P2093
P2860
P356
P1476
Energy levels of few-electron ...... ed by atomic force microscopy.
@en
P2093
Aashish A Clerk
Andrew Sachrajda
Lynda Cockins
Peter Grutter
Philip Poole
Sergei Studenikin
Steven D Bennett
P2860
P304
P356
10.1073/PNAS.0912716107
P407
P577
2010-05-10T00:00:00Z