Advances in patterning materials for 193 nm immersion lithography.
about
No time to lose--high throughput screening to assess nanomaterial safetyHighly tunable refractive index visible-light metasurface from block copolymer self-assembly.Fabrication of transistors on flexible substrates: from mass-printing to high-resolution alternative lithography strategies.Drops on soft surfaces learn the hard way.Advancing X-ray scattering metrology using inverse genetic algorithms.Organized chromophoric assemblies for nonlinear optical materials: towards (sub)wavelength scale architectures.Patterning highly ordered arrays of complex nanofeatures through EUV directed polarity switching of non chemically amplified photoresist.Self-assembly of gradient copolymers synthesized in semi-batch mode by nitroxide mediated polymerization.A novel photodegradable hyperbranched polymeric photoresist.Monolithic, Crystalline MOF Coating: An Excellent Patterning and Photoresist Material
P2860
Q28383671-FE99DE97-C10E-4419-9C90-F57D54FD89FFQ30819876-744584DB-ACD0-42E3-9847-252B2F32B5C8Q34377549-7EFD20F0-B007-4E61-8C3F-FAA1AA587339Q37068508-C194B8D0-0ED1-4230-8D1C-43B22A587F4CQ37188643-137CA23B-C87D-4FBA-9A45-A87B2920C219Q38264029-268E50E6-5554-4525-B0B3-3DA53D52B6F4Q38997418-78497168-8EA6-4950-9424-80AC2C93EB01Q50941362-2E9295C2-07CF-4790-9853-F70184508C6EQ53091149-4932CFDF-0DB9-4B4B-B949-844F58D533D7Q57548903-B3E30C8D-33C2-4AB1-8AE6-AFA8AD562904
P2860
Advances in patterning materials for 193 nm immersion lithography.
description
2010 nî lūn-bûn
@nan
2010年の論文
@ja
2010年学术文章
@wuu
2010年学术文章
@zh
2010年学术文章
@zh-cn
2010年学术文章
@zh-hans
2010年学术文章
@zh-my
2010年学术文章
@zh-sg
2010年學術文章
@yue
2010年學術文章
@zh-hant
name
Advances in patterning materials for 193 nm immersion lithography.
@en
Advances in patterning materials for 193 nm immersion lithography.
@nl
type
label
Advances in patterning materials for 193 nm immersion lithography.
@en
Advances in patterning materials for 193 nm immersion lithography.
@nl
prefLabel
Advances in patterning materials for 193 nm immersion lithography.
@en
Advances in patterning materials for 193 nm immersion lithography.
@nl
P356
P1433
P1476
Advances in patterning materials for 193 nm immersion lithography.
@en
P2093
Daniel P Sanders
P304
P356
10.1021/CR900244N
P577
2010-01-01T00:00:00Z