Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application.
about
Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta2O5-Ta system.The current limit and self-rectification functionalities in the TiO2/HfO2 resistive switching material system.Ultrasensitive Memristive Synapses Based on Lightly Oxidized Sulfide Films.Reliable current changes with selectivity ratio above 109 observed in lightly doped zinc oxide films
P2860
Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application.
description
2015 nî lūn-bûn
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2015年の論文
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2015年学术文章
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2015年学术文章
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2015年学术文章
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2015年学术文章
@zh-hans
2015年学术文章
@zh-my
2015年学术文章
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2015年學術文章
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2015年學術文章
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name
Forming-free and self-rectifyi ...... gh-density memory application.
@en
Forming-free and self-rectifyi ...... gh-density memory application.
@nl
type
label
Forming-free and self-rectifyi ...... gh-density memory application.
@en
Forming-free and self-rectifyi ...... gh-density memory application.
@nl
prefLabel
Forming-free and self-rectifyi ...... gh-density memory application.
@en
Forming-free and self-rectifyi ...... gh-density memory application.
@nl
P2093
P2860
P356
P1433
P1476
Forming-free and self-rectifyi ...... gh-density memory application.
@en
P2093
Cheng Song
Guangyue Wang
Haijun Mao
Minjuan Wang
Shuang Gao
P2860
P304
P356
10.1039/C4NR06406B
P407
P50
P577
2015-04-01T00:00:00Z