Deep reactive-ion etching
Deep reactive-ion etching (DRIE) is a highly anisotropic etch process used to create deep penetration, steep-sided holes and trenches in wafers/substrates, typically with high aspect ratios . It was developed for microelectromechanical systems (MEMS), which require these features, but is also used to excavate trenches for high-density capacitors for DRAM and more recently for creating through silicon vias (TSVs) in advanced 3D wafer level packaging technology .
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Deep reactive-ion etching
Deep reactive-ion etching (DRIE) is a highly anisotropic etch process used to create deep penetration, steep-sided holes and trenches in wafers/substrates, typically with high aspect ratios . It was developed for microelectromechanical systems (MEMS), which require these features, but is also used to excavate trenches for high-density capacitors for DRAM and more recently for creating through silicon vias (TSVs) in advanced 3D wafer level packaging technology .
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Deep reactive-ion etching (DRI ...... rtical structures can be made.
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La gravure ionique réactive pr ...... étés résistives particulières.
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Reaktives Ionentiefenätzen (en ...... s Plasma-unterstützten Ätzens.
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深掘りRIE（ふかほりアールアイイー、Deep RIE）とは ...... の保護とエッチングを繰り返し行うエッチング方法が用いられる。
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726,188,153
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Deep reactive-ion etching (DRI ...... r level packaging technology .
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La gravure ionique réactive pr ...... rs à haute densité de la DRAM.
@fr
Reaktives Ionentiefenätzen (en ...... s Plasma-unterstützten Ätzens.
@de
深掘りRIE（ふかほりアールアイイー、Deep RIE）とは ...... の保護とエッチングを繰り返し行うエッチング方法が用いられる。
@ja
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Deep reactive-ion etching
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Gravure ionique réactive profonde
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Reaktives Ionentiefenätzen
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深掘りRIE
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