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NL400778Q
NL400778Q
http://dx.doi.org/10.1021/NL400778Q
Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films.
P356
Q44538865-C8B7771D-F79B-41E2-A3BD-B4295A5058E4
P356
NL400778Q
http://dx.doi.org/10.1021/NL400778Q