Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films.
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Chemical doping of MoS2 multilayer by p-toluene sulfonic acidExploring atomic defects in molybdenum disulphide monolayers.Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric.Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects.Electrical contacts to two-dimensional semiconductors.Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors.Progress of Large-Scale Synthesis and Electronic Device Application of Two-Dimensional Transition Metal Dichalcogenides.Recent Advances in Doping of Molybdenum Disulfide: Industrial Applications and Future Prospects.Synthesis and characterization of large-area and continuous MoS2 atomic layers by RF magnetron sputtering.The Integration of Sub-10 nm Gate Oxide on MoS2 with Ultra Low Leakage and Enhanced Mobility.Fabrication and investigation of the optoelectrical properties of MoS2/CdS heterojunction solar cells.Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering.Atomic Defects in Two-Dimensional Materials: From Single-Atom Spectroscopy to Functionalities in Opto-/Electronics, Nanomagnetism, and Catalysis.Flexible and stretchable thin-film transistors based on molybdenum disulphide.Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial LayerLarge-scale chemical assembly of atomically thin transistors and circuits.Controlled doping of large-area trilayer MoS2 with molecular reductants and oxidants.Transport properties of the top and bottom surfaces in monolayer MoS2 grown by chemical vapor deposition.Direct Growth of High Mobility and Low-Noise Lateral MoS2 -Graphene Heterostructure Electronics.The role of electronic coupling between substrate and 2D MoS2 nanosheets in electrocatalytic production of hydrogen.Performance of field-effect transistors based on Nb(x)W(1-x)S2 monolayers.Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime.Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening.Two-dimensional quasi-freestanding molecular crystals for high-performance organic field-effect transistors.Two-dimensional electronic transport and surface electron accumulation in MoS2.Interface engineering for high-performance top-gated MoS2 field-effect transistors.Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition.
P2860
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P2860
Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films.
description
2013 nî lūn-bûn
@nan
2013年の論文
@ja
2013年学术文章
@wuu
2013年学术文章
@zh
2013年学术文章
@zh-cn
2013年学术文章
@zh-hans
2013年学术文章
@zh-my
2013年学术文章
@zh-sg
2013年學術文章
@yue
2013年學術文章
@zh-hant
name
Statistical study of deep subm ...... on molybdenum disulfide films.
@en
Statistical study of deep subm ...... on molybdenum disulfide films.
@nl
type
label
Statistical study of deep subm ...... on molybdenum disulfide films.
@en
Statistical study of deep subm ...... on molybdenum disulfide films.
@nl
prefLabel
Statistical study of deep subm ...... on molybdenum disulfide films.
@en
Statistical study of deep subm ...... on molybdenum disulfide films.
@nl
P2093
P356
P1433
P1476
Statistical study of deep subm ...... on molybdenum disulfide films.
@en
P2093
Adam T Neal
Mengwei Si
Peide D Ye
Sina Najmaei
P304
P356
10.1021/NL400778Q
P407
P577
2013-05-20T00:00:00Z