Heteroepitaxial graphite on 6 H − SiC ( 0001 ) : Interface formation through conduction-band electronic structure - Wikidata - wikimedia - TriplyDB

Heteroepitaxial graphite on 6 H − SiC ( 0001 ) : Interface formation through conduction-band electronic structure

Heteroepitaxial graphite on 6 H − SiC ( 0001 ) : Interface formation through conduction-band electronic structure

http://www.wikidata.org/entity/Q27348709

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Growth kinetics of epitaxial graphene on SiC substrates Quantum oscillations and quantum Hall effect in epitaxial graphene Interlayer Interaction and Electronic Screening in Multilayer Graphene Investigated with Angle-Resolved Photoemission Spectroscopy Graphene from amorphous titanium carbide by chlorination under 200 °C and atmospheric pressures Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide Nanoscale measurements of unoccupied band dispersion in few-layer graphene.Direct transformation of amorphous silicon carbide into graphene under low temperature and ambient pressure Magnetic effects in sulfur-decorated graphene.Giant quantum Hall plateaus generated by charge transfer in epitaxial graphene.Controllable growth of vertically aligned graphene on C-face SiC.Graphene - a promising material for organic photovoltaic cells.Graphene and its derivatives: switching ON and OFF.Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing.Graphene nanomaterials as biocompatible and conductive scaffolds for stem cells: impact for tissue engineering and regenerative medicine.Graphene: Synthesis, bio-applications, and properties.Graphene: Piecing it together.In Situ SR-XPS Observation of Ni-Assisted Low-Temperature Formation of Epitaxial Graphene on 3C-SiC/Si.Rapid and direct conversion of graphite crystals into high-yielding, good-quality graphene by supercritical fluid exfoliation.Deposition of topological silicene, germanene and stanene on graphene-covered SiC substrates.Epitaxial growth of graphene on 6H-silicon carbide substrate by simulated annealing method.Random walk to graphene (Nobel lecture).Approaching truly freestanding graphene: the structure of hydrogen-intercalated graphene on 6H-SiC(0001).Thermodynamic equilibrium conditions of graphene films on SiC.Electronic and magnetic properties of quasifreestanding graphene on Ni.Near-edge x-ray absorption fine-structure investigation of graphene.Probing the dielectric response of the interfacial buffer layer in epitaxial graphene via optical spectroscopy.Epitaxial Graphene on SiC: A Review of Growth and Characterization Thermodynamics and Kinetics of Graphene Growth on SiC(0001)Solid-state decomposition of silicon carbide for growing ultra-thin heteroepitaxial graphite films Controlling the Electronic Structure of Bilayer Graphene Electronic Structure of Epitaxial Graphene Layers on SiC: Effect of the Substrate Synthesis and characterization of graphene-containing thermoresponsive nanocomposite hydrogels of poly(N-vinylcaprolactam) prepared by frontal polymerization Band Engineering and Magnetic Doping of Epitaxial Graphene on SiC (0001)Graphene-Based Materials for Photoanodes in Dye-Sensitized Solar Cells Interaction of C60with clean and hydrogenated SiC-(3×3) probed through the unoccupied electronic states Reversible hydrogenation of deuterium-intercalated quasi-free-standing graphene on SiC(0001)High-temperature desorption of C60covalently bound to6H-SiC(0001)-(3×3)Growth and Intercalation of Graphene on Silicon Carbide Studied by Low-Energy Electron Microscopy Detecting the local transport properties and the dimensionality of transport of epitaxial graphene by a multi-point probe approach Extended van Hove Singularity and Superconducting Instability in Doped Graphene

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P2860

Heteroepitaxial graphite on 6 H − SiC ( 0001 ) : Interface formation through conduction-band electronic structure

http://www.wikidata.org/entity/Q27348709

description

1998 nî lūn-bûn

@nan

1998 թուականի Դեկտեմբերին հրատարակուած գիտական յօդուած

@hyw

1998 թվականի դեկտեմբերին հրատարակված գիտական հոդված

@hy

1998年の論文

@ja

1998年論文

@yue

1998年論文

@zh-hant

1998年論文

@zh-hk

1998年論文

@zh-mo

1998年論文

@zh-tw

1998年论文

@wuu

name

Heteroepitaxial graphite on 6 ...... tion-band electronic structure

@ast

Heteroepitaxial graphite on 6 ...... tion-band electronic structure

@en

Heteroepitaxial graphite on 6 H − SiC

@nl

type

label

Heteroepitaxial graphite on 6 ...... tion-band electronic structure

@ast

Heteroepitaxial graphite on 6 ...... tion-band electronic structure

@en

Heteroepitaxial graphite on 6 H − SiC

@nl

prefLabel

Heteroepitaxial graphite on 6 ...... tion-band electronic structure

@ast

Heteroepitaxial graphite on 6 ...... tion-band electronic structure

@en

Heteroepitaxial graphite on 6 H − SiC

@nl

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PHYSREVB.58.16396

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Physical Review B

P2093

I. Forbeaux

http://www.w3.org/2001/XMLSchema#string

J.-M. Debever

http://www.w3.org/2001/XMLSchema#string

J.-M. Themlin

http://www.w3.org/2001/XMLSchema#string

P2860

APPLIED PHYSICS: Carbon Nanotubes for Next-Generation Electronics Devices

Quenched disorder, memory, and self-organization.

Conduction-band structure of graphite single crystals studied by angle-resolved inverse photoemission and target-current spectroscopy.

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16396-16406

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scholarly article

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3118785

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10.1103/PHYSREVB.58.16396

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24

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58

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1998-12-15T00:00:00Z

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P921

condensed matter physics