Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide
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Optical Fibre Sensors Using Graphene-Based Materials: A Review.Microscopic origins of the terahertz carrier relaxation and cooling dynamics in graphene.Electronic cooling via interlayer Coulomb coupling in multilayer epitaxial graphene.Charge transfer and electronic doping in nitrogen-doped graphene.Dirac fermion heating, current scaling, and direct insulator-quantum Hall transition in multilayer epitaxial graphene.Magnetic effects in sulfur-decorated graphene.Near-field photocurrent nanoscopy on bare and encapsulated graphene.Enhanced crystallinity of epitaxial graphene grown on hexagonal SiC surface with molybdenum plate capping.Industrial graphene metrology.Semiconducting graphene: converting graphene from semimetal to semiconductor.Graphene for energy solutions and its industrialization.An electronic structure perspective of graphene interfaces.Exceptional ballistic transport in epitaxial graphene nanoribbons.Graphene in light: design, synthesis and applications of photo-active graphene and graphene-like materials.Tunable band gap in gold intercalated graphene.Band gap opening in methane intercalated graphene.Tunable bands in biased multilayer epitaxial graphene.NanoARPES of twisted bilayer graphene on SiC: absence of velocity renormalization for small angles.Interface and interaction of graphene layers on SiC(0001[combining macron]) covered with TiC(111) intercalation.Epitaxial graphene homogeneity and quantum Hall effect in millimeter-scale devices.Native point defects on hydrogen-passivated 4H-SiC (0001) surface and the effects on metal adsorptions.Symmetry-Breaking Supercollisions in Landau-Quantized Graphene.Ultrahard carbon film from epitaxial two-layer graphene.Electron Interference in Ballistic Graphene Nanoconstrictions.Thermodynamic equilibrium conditions of graphene films on SiC.Semiconducting Graphene from Highly Ordered Substrate Interactions.Epitaxial Graphene on SiC: A Review of Growth and CharacterizationEngineering the electronic structure of epitaxial graphene by transfer doping and atomic intercalationRaman Spectroscopy of Multi-Layer Graphene epitaxially Grown on 4H-SiC by Joule Heat DecompositionDisorder-perturbed Landau levels in high-electron-mobility epitaxial grapheneGraphoepitaxy of High-Quality GaN Layers on Graphene/6H-SiCGrowth of large domain epitaxial graphene on the C-face of SiCBallistic tracks in graphene nanoribbonsThe emergence of quantum capacitance in epitaxial grapheneProspective Life Cycle Assessment of Epitaxial Graphene Production at Different Manufacturing Scales and MaturityPolarization Selection Rules for Inter-Landau-Level Transitions in Epitaxial Graphene Revealed by the Infrared Optical Hall EffectGrowth and characterization of sidewall graphene nanoribbonsGrowth and Intercalation of Graphene on Silicon Carbide Studied by Low-Energy Electron MicroscopyDirect growth of quasi-free-standing epitaxial graphene on nonpolar SiC surfacesPrecise control of epitaxy of graphene by microfabricating SiC substrate
P2860
Q28817099-24E84D22-51C6-42AF-A5FB-F1250552ABF8Q30381165-1663C451-B17B-4259-8B2C-1E640493F519Q30400846-76F901ED-71B9-40B6-AE77-5BE00C7131E4Q30402231-8AD81316-12FE-4C88-B838-67E176C556A1Q30449516-9D782CEE-B110-42A6-9F66-8D6DD31EEB3FQ36591382-4EBA2A4D-92BA-4B3D-94FC-64C85FE88390Q36637169-C447A292-8831-462C-96E1-939A2A86FBABQ37744321-01E0CD58-1B1B-43F0-9421-4ECDE9D8347FQ38005932-46F1607E-EF83-41D8-890F-066480D78581Q38074007-D3F8B32A-4570-42DB-A024-4A34F9692911Q38140657-03B8A42C-1ADD-411A-9E94-D436EC155B48Q38190435-1362D9F5-80B9-4350-98B9-724BEF8566F6Q39255697-86EFF914-08FC-4CC8-88C7-6474A9BB25E0Q39440503-F1478D81-743F-4887-9909-D077BE83EC26Q39528128-E0986F8F-E4C6-46C5-8006-B5720786E6B2Q39603316-19B9C0CE-004E-433B-8CD7-1603727A3423Q39635826-E0A025EC-F1AB-4CBE-9DFB-B3A2FE0BAF6DQ42574505-48DE873A-0618-4C1B-9D8C-EE195F923EFBQ47632775-A3552DC7-C418-4D8D-864F-E6693DE849CDQ47661334-AF511014-0F29-4F4A-83CD-5658D89AF1C5Q47920772-CF28004D-ADCB-4498-839A-CE6944401235Q48650034-BF7A66FD-0ADC-49A4-B79D-C1868644AAA1Q49644076-2B54D898-FE38-4211-882F-3C9BD70C7710Q50956652-B24ED2C0-EE90-4311-BB5E-5AD9BBD007A4Q52882705-A688AE8B-FA3A-4DE3-A71A-252DE4AF4BD2Q53322260-0B91D42A-4F2D-461C-A463-E4FD8264FD6BQ56030524-C801F9CB-C347-450F-B513-FA5E3A6361C6Q56622129-866D1411-11D2-40B7-8A8F-48FEA08806F5Q57140653-AC1AA5B7-C315-4EA0-8B8F-4F3B769E69FAQ57188904-D107A560-7C77-4F16-9A06-D8CB52D0EA78Q57388874-8B8F0DF6-F4DB-4E85-BE23-72BA4665892BQ57550009-65D2CAB8-E201-476A-8C11-1D57253A6B24Q57793541-62CB94E3-6118-4B2B-81F2-71230B8C7F3CQ57814356-27A123BE-753F-41BD-AF5F-D9BE704C4E31Q57974094-D49E3D63-A3A6-43C5-8141-F04981373D36Q58032336-71AE9B2D-6937-4312-8CD0-F1BA738B6B08Q58153603-B6F659BD-A82B-439B-A02D-92D55B8BA06AQ58485442-43AD22DF-9F7F-46AE-923D-E15B532F5929Q58485470-FAF59747-F4B5-4FF4-8669-B16E84D9433CQ58485500-B7D2D160-D1EE-4E1E-99BD-763596232883
P2860
Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide
description
2011 nî lūn-bûn
@nan
2011 թուականի Սեպտեմբերին հրատարակուած գիտական յօդուած
@hyw
2011 թվականի սեպտեմբերին հրատարակված գիտական հոդված
@hy
2011年の論文
@ja
2011年論文
@yue
2011年論文
@zh-hant
2011年論文
@zh-hk
2011年論文
@zh-mo
2011年論文
@zh-tw
2011年论文
@wuu
name
Large area and structured epit ...... sublimation of silicon carbide
@ast
Large area and structured epit ...... sublimation of silicon carbide
@en
type
label
Large area and structured epit ...... sublimation of silicon carbide
@ast
Large area and structured epit ...... sublimation of silicon carbide
@en
prefLabel
Large area and structured epit ...... sublimation of silicon carbide
@ast
Large area and structured epit ...... sublimation of silicon carbide
@en
P2093
P2860
P356
P1476
Large area and structured epit ...... sublimation of silicon carbide
@en
P2093
Baiqian Zhang
Claire Berger
Edward Conrad
John Hankinson
Mike Sprinkle
Walt A de Heer
P2860
P304
16900-16905
P356
10.1073/PNAS.1105113108
P407
P577
2011-09-29T00:00:00Z