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Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates

Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates

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Morphology Controlled Fabrication of InN Nanowires on Brass Substrates.Selective-Area Growth of Transferable InN Nanocolumns by Using Anodic Aluminum Oxide Nanotemplates.

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Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates

http://www.wikidata.org/entity/Q28833423

description

2016 nî lūn-bûn

@nan

2016 թուականի Դեկտեմբերին հրատարակուած գիտական յօդուած

@hyw

2016 թվականի դեկտեմբերին հրատարակված գիտական հոդված

@hy

2016年の論文

@ja

2016年論文

@yue

2016年論文

@zh-hant

2016年論文

@zh-hk

2016年論文

@zh-mo

2016年論文

@zh-tw

2016年论文

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name

Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates

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Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates

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type

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Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates

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Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates

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prefLabel

Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates

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Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates

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S11671-016-1482-X

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Nanoscale Research Letters

P1476

Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates

@en

P2093

Guijuan Zhao

http://www.w3.org/2001/XMLSchema#string

Hongyuan Wei

http://www.w3.org/2001/XMLSchema#string

Lianshan Wang

http://www.w3.org/2001/XMLSchema#string

Shaoyan Yang

http://www.w3.org/2001/XMLSchema#string

Zhen Chen

http://www.w3.org/2001/XMLSchema#string

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Spatial mapping of efficiency of GaN/InGaN nanowire array solar cells using scanning photocurrent microscopy.

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.

Tuning the surface Fermi level on p-type gallium nitride nanowires for efficient overall water splitting.

Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film.

Growth of gallium nitride and indium nitride nanowires on conductive and flexible carbon cloth substrates.

Growth of large-scale vertically aligned GaN nanowires and their heterostructures with high uniformity on SiO(x) by catalyst-free molecular beam epitaxy.

Morphology and composition controlled growth of polar c-axis and nonpolar m-axis well-aligned ternary III-nitride nanotube arrays.

Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors.

GaN nanobelt-based strain-gated piezotronic logic devices and computation.

High optical polarization ratio from semipolar (202¯1¯) blue-green InGaN/GaN light-emitting diodes

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scholarly article

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1266130

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10.1186/S11671-016-1482-X

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2016-12-01T00:00:00Z

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1032601298

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27229517

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