An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.
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Growth of Well-Aligned InN Nanorods on Amorphous Glass SubstratesImproved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlatticesGaN Haeckelite Single-Layered Nanostructures: Monolayer and Nanotubes.Berkovich Nanoindentation on AlN Thin Films.Low-density nanoporous phases of group-III nitrides built from sodalite cage clusters.Deep ultraviolet light-emitting hexagonal boron nitride synthesized at atmospheric pressure.Formation of aluminium, aluminium nitride and nitrogen clusters via laser ablation of nano aluminium nitride. Laser Desorption Ionisation and Matrix-Assisted Laser Desorption Ionisation Time-of-Flight Mass Spectrometry.Ultraviolet Lasers Realized via Electrostatic Doping MethodTin-Doped Inorganic Amorphous Films for Use as Transparent Monolithic PhosphorsSemiconductor Nanowire Light-Emitting Diodes Grown on Metal: A Direction Toward Large-Scale Fabrication of Nanowire Devices.Observation of stimulated emission from a single Fe-doped AlN triangular fiber at room temperature.Deep-UV nitride-on-silicon microdisk lasers.Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers.Large Optical Gain AlInN-Delta-GaN Quantum Well for Deep Ultraviolet Emitters.Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wellsDilute-As AlNAs Alloy for Deep-Ultraviolet Emitter.Absorbance Based Light Emitting Diode Optical Sensors and Sensing Devices.Mechanochemical route to the synthesis of nanostructured Aluminium nitride.Atomic structure of luminescent centers in high-efficiency Ce-doped w-AlN single crystalMorphology Controlled Fabrication of InN Nanowires on Brass Substrates.Top- and bottom-emission-enhanced electroluminescence of deep-UV light-emitting diodes induced by localised surface plasmons.Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition.High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition.Low-dimensional nanostructure ultraviolet photodetectors.An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emissionSurface Charge Transfer Doping of Low-Dimensional Nanostructures toward High-Performance Nanodevices.Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures.Synthesis of Tin Nitride Sn(x)N(y) Nanowires by Chemical Vapour Deposition.AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet OptoelectronicsEnvironmentally friendly method to grow wide-bandgap semiconductor aluminum nitride crystals: Elementary source vapor phase epitaxyAluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources.AlN Nanowall Structures Grown on Si (111) Substrate by Molecular Beam EpitaxyCrystallographic and electronic properties of AlCrN films that absorb visible light.Narrow energy gap between triplet and singlet excited states of Sn2+ in borate glass.Efficiency of hydroxyl radical formation and phenol decomposition using UV light emitting diodes and H2O2.Vacuum Rabi splitting of exciton-polariton emission in an AlN film.Semiconductor Solid-Solution Nanostructures: Synthesis, Property Tailoring, and Applications.Photoluminescence of Diphenylalanine Peptide Nano/Microstructures: From Mechanisms to Applications.Orbitally driven low thermal conductivity of monolayer gallium nitride (GaN) with planar honeycomb structure: a comparative study.Ultraviolet Photodissociation Induced by Light-Emitting Diodes in a Planar Ion Trap.
P2860
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P2860
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.
description
2006 nî lūn-bûn
@nan
2006 թուականի Մայիսին հրատարակուած գիտական յօդուած
@hyw
2006 թվականի մայիսին հրատարակված գիտական հոդված
@hy
2006年の論文
@ja
2006年論文
@yue
2006年論文
@zh-hant
2006年論文
@zh-hk
2006年論文
@zh-mo
2006年論文
@zh-tw
2006年论文
@wuu
name
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.
@ast
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.
@en
type
label
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.
@ast
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.
@en
prefLabel
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.
@ast
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.
@en
P2093
P356
P1433
P1476
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.
@en
P2093
Makoto Kasu
Toshiki Makimoto
Yoshitaka Taniyasu
P2888
P304
P356
10.1038/NATURE04760
P407
P577
2006-05-01T00:00:00Z
P5875
P6179
1020735240