Preparation of VO2 thin film and its direct optical bit recording characteristics.
about
Switchable reflectivity on silicon from a composite VO2-SiO2 protecting layerSynthesis and characterization of size-controlled vanadium dioxide nanocrystals in a fused silica matrixEnhanced hysteresis in the semiconductor-to-metal phase transition of VO2 precipitates formed in SiO2 by ion implantationA new route to single crystalline vanadium dioxide nanoflakes via thermal reduction
P2860
Preparation of VO2 thin film and its direct optical bit recording characteristics.
description
1983 nî lūn-bûn
@nan
1983 թուականի Յունուարին հրատարակուած գիտական յօդուած
@hyw
1983 թվականի հունվարին հրատարակված գիտական հոդված
@hy
1983年の論文
@ja
1983年論文
@yue
1983年論文
@zh-hant
1983年論文
@zh-hk
1983年論文
@zh-mo
1983年論文
@zh-tw
1983年论文
@wuu
name
Preparation of VO2 thin film and its direct optical bit recording characteristics.
@ast
Preparation of VO2 thin film and its direct optical bit recording characteristics.
@en
Preparation of VO2 thin film and its direct optical bit recording characteristics.
@nl
type
label
Preparation of VO2 thin film and its direct optical bit recording characteristics.
@ast
Preparation of VO2 thin film and its direct optical bit recording characteristics.
@en
Preparation of VO2 thin film and its direct optical bit recording characteristics.
@nl
prefLabel
Preparation of VO2 thin film and its direct optical bit recording characteristics.
@ast
Preparation of VO2 thin film and its direct optical bit recording characteristics.
@en
Preparation of VO2 thin film and its direct optical bit recording characteristics.
@nl
P2093
P356
P1433
P1476
Preparation of VO2 thin film and its direct optical bit recording characteristics.
@en
P2093
P304
P356
10.1364/AO.22.000265
P407
P577
1983-01-01T00:00:00Z