Enhanced hysteresis in the semiconductor-to-metal phase transition of VO2 precipitates formed in SiO2 by ion implantation
about
Phase transition characteristics in the conductivity of VO₂(A) nanowires: size and surface effects.Two-dimensional current percolation in nanocrystalline vanadiumdioxide filmsOptical properties of subwavelength hole arrays in vanadium dioxide thin filmsSemiconductor to metal phase transition in the nucleation and growth of VO2 nanoparticles and thin filmsSwitchable reflectivity on silicon from a composite VO2-SiO2 protecting layerSynthesis and characterization of size-controlled vanadium dioxide nanocrystals in a fused silica matrix
P2860
Enhanced hysteresis in the semiconductor-to-metal phase transition of VO2 precipitates formed in SiO2 by ion implantation
description
im November 2001 veröffentlichter wissenschaftlicher Artikel
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wetenschappelijk artikel
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наукова стаття, опублікована в листопаді 2001
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name
Enhanced hysteresis in the sem ...... ed in SiO2 by ion implantation
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Enhanced hysteresis in the sem ...... ed in SiO2 by ion implantation
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type
label
Enhanced hysteresis in the sem ...... ed in SiO2 by ion implantation
@en
Enhanced hysteresis in the sem ...... ed in SiO2 by ion implantation
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prefLabel
Enhanced hysteresis in the sem ...... ed in SiO2 by ion implantation
@en
Enhanced hysteresis in the sem ...... ed in SiO2 by ion implantation
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P2093
P2860
P356
P1476
Enhanced hysteresis in the sem ...... ed in SiO2 by ion implantation
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P2093
L. C. Feldman
R. F. Haglund
T. E. Haynes
P2860
P304
P356
10.1063/1.1415768
P407
P577
2001-11-05T00:00:00Z