Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. - Wikidata - wikimedia - TriplyDB

Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide.

Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide.

http://www.wikidata.org/entity/Q33441961

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Growth kinetics of epitaxial graphene on SiC substrates Synthesis and applications of carbon nanomaterials for energy generation and storage Investigation of structural and electronic properties of epitaxial graphene on 3C-SiC(100)/Si(100) substrates Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale.Quantum oscillations and quantum Hall effect in epitaxial graphene Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation Competition for Graphene: Graphynes with Direction-Dependent Dirac Cones Controllable Synthesis of Graphene by Plasma-Enhanced Chemical Vapor Deposition and Its Related Applications A study of the synthetic methods and properties of graphenes Self-Heating and Failure in Scalable Graphene Devices.Large-Area Growth of Turbostratic Graphene on Ni(111) via Physical Vapor Deposition Interlayer catalytic exfoliation realizing scalable production of large-size pristine few-layer graphene.In situ observation of step-edge in-plane growth of graphene in a STEM Graphene etching on SiC grains as a path to interstellar polycyclic aromatic hydrocarbons formation.Solution processing of transparent conductors: from flask to film.The study of the effects of cooling conditions on high quality graphene growth by the APCVD method.A facile method for the large-scale continuous synthesis of graphene sheets using a novel catalyst.Synthesis and characterization of graphene: influence of synthesis variables.High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen.Fabrication of graphene films with high transparent conducting characteristics Towards a quantum resistance standard based on epitaxial graphene.Observation of plasmarons in quasi-freestanding doped graphene.Graphene nanosheet: synthesis, molecular engineering, thin film, hybrids, and energy and analytical applications.Wafer-scale graphene integrated circuit.Quantitative multichannel NC-AFM data analysis of graphene growth on SiC(0001).Wafer-scale growth of single-crystal monolayer graphene on reusable hydrogen-terminated germanium.Direct optical characterization of graphene growth and domains on growth substrates.Decorating single layer graphene oxide with electron donor and acceptor molecules for the study of photoinduced electron transfer.Laser-induced etching of few-layer graphene synthesized by Rapid-Chemical Vapour Deposition on Cu thin films Noncovalent functionalization of graphene in suspension.Rebar graphene from functionalized boron nitride nanotubes.A versatile photoelectron spectrometer for pressures up to 30 mbar.Studies on the mechanical stretchability of transparent conductive film based on graphene-metal nanowire structures Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide Comparing graphene growth on Cu(111) versus oxidized Cu(111).Repeated growth and bubbling transfer of graphene with millimetre-size single-crystal grains using platinum.Silicon carbide-free graphene growth on silicon for lithium-ion battery with high volumetric energy density.Origin of the relatively low transport mobility of graphene grown through chemical vapor deposition Understanding the STM images of epitaxial graphene on a reconstructed 6H-SiC(0001) surface: the role of tip-induced mechanical distortion of graphene.Low-Energy Electron Potentiometry: Contactless Imaging of Charge Transport on the Nanoscale.

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Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide.

http://www.wikidata.org/entity/Q33441961

description

2009 nî lūn-bûn

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2009 թուականի Փետրուարին հրատարակուած գիտական յօդուած

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2009 թվականի փետրվարին հրատարակված գիտական հոդված

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2009年の論文

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2009年論文

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2009年論文

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2009年論文

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2009年論文

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2009年論文

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2009年论文

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Towards wafer-size graphene la ...... hitization of silicon carbide.

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Towards wafer-size graphene la ...... hitization of silicon carbide.

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Towards wafer-size graphene la ...... hitization of silicon carbide.

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P2093

Aaron Bostwick

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Andreas K Schmid

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Daniel Waldmann

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Gary L Kellogg

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Jonas Röhrl

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Karsten Horn

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Konstantin V Emtsev

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Lothar Ley

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Sergey A Reshanov

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Taisuke Ohta

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10.1038/NMAT2382

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