Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si.
about
Scanning X-ray strain microscopy of inhomogeneously strained Ge micro-bridgesUltra-broadband infrared pump-probe spectroscopy using synchrotron radiation and a tuneable pump.Direct-bandgap light-emitting germanium in tensilely strained nanomembranes.New avenues to an old material: controlled nanoscale doping of germanium.Material gain engineering in GeSn/Ge quantum wells integrated with an Si platformEmission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional structureGermanium epitaxy on silicon.High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects.Tuning the electro-optical properties of germanium nanowires by tensile strain.Low-threshold optically pumped lasing in highly strained germanium nanowires.Size tunable Ge quantum dots for near-ultraviolet to near-infrared photosensing with high figures of merit.Optical imaging of strain in two-dimensional crystals.Prediction that uniaxial tension along <111> produces a direct band gap in germanium.Group IV Light Sources to Enable the Convergence of Photonics and ElectronicsHigh-Throughput Multiple Dies-to-Wafer Bonding Technology and III/V-on-Si Hybrid Lasers for Heterogeneous Integration of Optoelectronic Integrated CircuitsWhispering Gallery Mode Resonances from Ge Micro-Disks on Suspended BeamsSilicon-Based Light Sources for Silicon Integrated CircuitsThe Achievements and Challenges of Silicon PhotonicsEpitaxial Growth of Germanium on Silicon for Light EmittersRecent Progress in Silicon Photonics: A Review
P2860
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P2860
Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si.
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2007 nî lūn-bûn
@nan
2007 թուականի Սեպտեմբերին հրատարակուած գիտական յօդուած
@hyw
2007 թվականի սեպտեմբերին հրատարակված գիտական հոդված
@hy
2007年の論文
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2007年学术文章
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2007年学术文章
@zh-cn
2007年学术文章
@zh-hans
2007年学术文章
@zh-my
2007年学术文章
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2007年學術文章
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name
Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si.
@ast
Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si.
@en
type
label
Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si.
@ast
Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si.
@en
prefLabel
Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si.
@ast
Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si.
@en
P2093
P356
P1433
P1476
Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si.
@en
P2093
Jifeng Liu
Jurgen Michel
Lionel C Kimerling
Thomas L Koch
Xiaochen Sun
Xiaoxin Wang
P304
11272-11277
P356
10.1364/OE.15.011272
P407
P577
2007-09-01T00:00:00Z