about
Laser-vibrometric ultrasonic characterization of resonant modes and quality factors of Ge membranesLaser recrystallization and inscription of compositional microstructures in crystalline SiGe-core fibresA new material platform of Si photonics for implementing architecture of dense wavelength division multiplexing on Si bulk wafer.Ultra-broadband infrared pump-probe spectroscopy using synchrotron radiation and a tuneable pump.Direct-bandgap light-emitting germanium in tensilely strained nanomembranes.New avenues to an old material: controlled nanoscale doping of germanium.Silicon-based silicon-germanium-tin heterostructure photonicsNanoporous Ge thin film production combining Ge sputtering and dopant implantation.Bottom-up assembly of metallic germanium.Ge-photodetectors for Si-based optoelectronic integration.Optical and magneto-optical behavior of Cerium Yttrium Iron Garnet thin films at wavelengths of 200-1770 nm.Material gain engineering in GeSn/Ge quantum wells integrated with an Si platformEnhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature.A self-assembled microbonded germanium/silicon heterojunction photodiode for 25 Gb/s high-speed optical interconnectsGermanium epitaxy on silicon.High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects.Enhanced Telecom Emission from Single Group-IV Quantum Dots by Precise CMOS-Compatible Positioning in Photonic Crystal Cavities.Strain in a silicon-on-insulator nanostructure revealed by 3D x-ray Bragg ptychography.Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures.Room-temperature efficient light detection by amorphous Ge quantum wellsElectric tuning of direct-indirect optical transitions in silicon.Tuning the electro-optical properties of germanium nanowires by tensile strain.Experimental demonstration of reservoir computing on a silicon photonics chip.Low-threshold optically pumped lasing in highly strained germanium nanowires.Size tunable Ge quantum dots for near-ultraviolet to near-infrared photosensing with high figures of merit.Optically reconfigurable polarized emission in GermaniumGroup IV Light Sources to Enable the Convergence of Photonics and ElectronicsHigh-Throughput Multiple Dies-to-Wafer Bonding Technology and III/V-on-Si Hybrid Lasers for Heterogeneous Integration of Optoelectronic Integrated CircuitsWhispering Gallery Mode Resonances from Ge Micro-Disks on Suspended BeamsGate-Stack Engineering for Self-Organized Ge-dot/SiO2/SiGe-Shell MOS CapacitorsSi/SiGe Heterointerfaces in One-, Two-, and Three-Dimensional Nanostructures: Their Impact on SiGe Light EmissionGe growth on porous silicon: The effect of buffer porosity on the epilayer crystalline qualityEpitaxial Growth of Germanium on Silicon for Light EmittersRecent Progress in Silicon Photonics: A ReviewRoom Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction PhotodiodesLow Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition
P2860
Q30369404-562E7BDB-2693-4185-9B3B-D376BEA5F63FQ30826422-41B08DB2-E290-46B3-B1BC-890D6FBBAB97Q33712191-61DD8927-F434-4AF3-8FC0-94EC04DAC6EEQ33948395-82E3A0E9-49E0-46E8-9B77-A59C2828E882Q34074617-2C195E1E-C44F-438D-B85B-64A26928DBCCQ34605763-3A7123FA-297A-458E-852E-13445B6C2E7FQ35102537-000D5F3D-57D5-44A6-87E8-B6803D231BEDQ35184481-2FA5E22C-B11B-41F4-AAC7-2E925897A974Q35740795-ED90D4F0-B8D8-4FF5-B5F3-8FCF2C305A5CQ35741299-29933A0F-2233-4A4E-AC8A-593F5A1B78D9Q35973068-18E1AA61-E04C-45E5-AEFC-780BD7415201Q36148768-823A45D9-9D45-4B09-AD02-D879D2A1FECAQ36235754-0ECFCC8F-85C2-4019-A041-15F7FC4FA2C9Q37309840-FBAD615A-9597-451A-831F-65058F4093E5Q37386494-BC512C13-A5BC-43AC-93FC-47AB68FB4DFEQ37704578-BEF13670-3DB2-46B9-86F0-82CFE4E5D9DBQ38739427-26EB7179-77F1-4698-ABAE-AF94A90466ECQ40766197-C60F1C4C-2AE8-43E8-977E-95809FFC0E25Q41785024-77E791F0-8DDF-410E-9A64-79624E6A6CB0Q41985648-73B491B6-2627-4A12-B8DD-DF8279AA46FEQ42028685-E4AC50A0-36C3-4BA4-BA6A-EFB0D032648EQ43058840-DD9CE102-F75C-4984-8B00-ECE1A59D45B6Q45957467-ECBA192F-373C-4EE2-B45F-C54795B77560Q45960518-D339A935-898A-4008-B4CA-E59EE46D3BFFQ47176171-85AD20D3-9F79-4007-AC40-2AF06C8D3564Q57174972-848A0B59-B442-461B-8164-412C9F00C4F6Q57901179-C978E1E6-745D-4034-B788-1EA2F504EC8CQ57901256-336CBA2F-CB55-4925-95E8-42315DB055A2Q57901277-74F98177-5CB3-4E03-94B7-9CB3E67537C6Q57901355-CA6805D8-9C56-4889-9569-C6E3C700EB9CQ57901368-B194E93B-B34A-4E66-B745-7FDA663CC1C4Q58238336-CE42C330-A85C-493A-9D87-F34FB43C4128Q58688924-ECE792F3-32AC-47B5-8273-A185253F830AQ58690402-56F052F8-2B16-4F7A-88D9-EC8C6B74531EQ58698777-40BDFC29-13C9-445E-8A8D-37C57168C939Q59046306-C1331F25-2D3D-4FAF-8DC0-A1C4963DA439
P2860
description
2010 nî lūn-bûn
@nan
2010 թուականի Մարտին հրատարակուած գիտական յօդուած
@hyw
2010 թվականի մարտին հրատարակված գիտական հոդված
@hy
2010年の論文
@ja
2010年論文
@yue
2010年論文
@zh-hant
2010年論文
@zh-hk
2010年論文
@zh-mo
2010年論文
@zh-tw
2010年论文
@wuu
name
Ge-on-Si laser operating at room temperature.
@ast
Ge-on-Si laser operating at room temperature.
@en
Ge-on-Si laser operating at room temperature.
@nl
type
label
Ge-on-Si laser operating at room temperature.
@ast
Ge-on-Si laser operating at room temperature.
@en
Ge-on-Si laser operating at room temperature.
@nl
prefLabel
Ge-on-Si laser operating at room temperature.
@ast
Ge-on-Si laser operating at room temperature.
@en
Ge-on-Si laser operating at room temperature.
@nl
P2093
P356
P1433
P1476
Ge-on-Si laser operating at room temperature.
@en
P2093
Jifeng Liu
Jurgen Michel
Lionel C Kimerling
Rodolfo Camacho-Aguilera
Xiaochen Sun
P304
P356
10.1364/OL.35.000679
P407
P577
2010-03-01T00:00:00Z