Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application
about
High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure.Enhancement of antireflection property of silicon using nanostructured surface combined with a polymer deposition.Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping.Surface Nanostructures Formed by Phase Separation of Metal Salt-Polymer Nanocomposite Film for Anti-reflection and Super-hydrophobic Applications.Probing and Manipulating the Interfacial Defects of InGaAs Dual-Layer Metal Oxides at the Atomic Scale.
P2860
Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application
description
2011 nî lūn-bûn
@nan
2011 թուականի Մայիսին հրատարակուած գիտական յօդուած
@hyw
2011 թվականի մայիսին հրատարակված գիտական հոդված
@hy
2011年の論文
@ja
2011年論文
@yue
2011年論文
@zh-hant
2011年論文
@zh-hk
2011年論文
@zh-mo
2011年論文
@zh-tw
2011年论文
@wuu
name
Fabrication of HfO2 patterns b ...... ing for III-V CMOS application
@ast
Fabrication of HfO2 patterns b ...... ing for III-V CMOS application
@en
type
label
Fabrication of HfO2 patterns b ...... ing for III-V CMOS application
@ast
Fabrication of HfO2 patterns b ...... ing for III-V CMOS application
@en
prefLabel
Fabrication of HfO2 patterns b ...... ing for III-V CMOS application
@ast
Fabrication of HfO2 patterns b ...... ing for III-V CMOS application
@en
P2093
P50
P356
P1476
Fabrication of HfO2 patterns b ...... ing for III-V CMOS application
@en
P2093
Luis Vazquez
Marcos Benedicto
Paloma Tejedor
P2888
P356
10.1186/1556-276X-6-400
P577
2011-05-31T00:00:00Z
P6179
1050756709