Single-step formation of ZnO/ZnWO(x) bilayer structure via interfacial engineering for high performance and low energy consumption resistive memory with controllable high resistance states.
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Status and Prospects of ZnO-Based Resistive Switching Memory Devices.Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays.Resistive switching of Sn-doped In2O3/HfO2 core-shell nanowire: geometry architecture engineering for nonvolatile memory.Intrinsic anionic rearrangement by extrinsic control: transition of RS and CRS in thermally elevated TiN/HfO2/Pt RRAM.
P2860
Single-step formation of ZnO/ZnWO(x) bilayer structure via interfacial engineering for high performance and low energy consumption resistive memory with controllable high resistance states.
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2013 nî lūn-bûn
@nan
2013 թուականի Օգոստոսին հրատարակուած գիտական յօդուած
@hyw
2013 թվականի օգոստոսին հրատարակված գիտական հոդված
@hy
2013年の論文
@ja
2013年論文
@yue
2013年論文
@zh-hant
2013年論文
@zh-hk
2013年論文
@zh-mo
2013年論文
@zh-tw
2013年论文
@wuu
name
Single-step formation of ZnO/ZnWO
@nl
Single-step formation of ZnO/Z ...... llable high resistance states.
@ast
Single-step formation of ZnO/Z ...... llable high resistance states.
@en
type
label
Single-step formation of ZnO/ZnWO
@nl
Single-step formation of ZnO/Z ...... llable high resistance states.
@ast
Single-step formation of ZnO/Z ...... llable high resistance states.
@en
prefLabel
Single-step formation of ZnO/ZnWO
@nl
Single-step formation of ZnO/Z ...... llable high resistance states.
@ast
Single-step formation of ZnO/Z ...... llable high resistance states.
@en
P2093
P356
P1476
Single-step formation of ZnO/Z ...... llable high resistance states.
@en
P2093
Chi-Hsin Huang
Hsin-Wei Huang
Jian-Shiou Huang
Shih-Ming Lin
Su-Jien Lin
Te-Chien Hou
Wen-Chih Chang
Yu-Lun Chueh
P304
P356
10.1021/AM4016928
P407
P577
2013-08-13T00:00:00Z