Intrinsic anionic rearrangement by extrinsic control: transition of RS and CRS in thermally elevated TiN/HfO2/Pt RRAM.

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Intrinsic anionic rearrangement by extrinsic control: transition of RS and CRS in thermally elevated TiN/HfO2/Pt RRAM.

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2017 nî lūn-bûn

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2017年の論文

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2017年学术文章

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Intrinsic anionic rearrangemen ...... lly elevated TiN/HfO2/Pt RRAM.

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Intrinsic anionic rearrangemen ...... lly elevated TiN/HfO2/Pt RRAM.

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Intrinsic anionic rearrangemen ...... lly elevated TiN/HfO2/Pt RRAM.

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Intrinsic anionic rearrangemen ...... lly elevated TiN/HfO2/Pt RRAM.

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Intrinsic anionic rearrangemen ...... lly elevated TiN/HfO2/Pt RRAM.

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Intrinsic anionic rearrangemen ...... lly elevated TiN/HfO2/Pt RRAM.

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P1476

Intrinsic anionic rearrangemen ...... lly elevated TiN/HfO2/Pt RRAM.

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P2093

Hangbing Lv

http://www.w3.org/2001/XMLSchema#string

Ming Liu

http://www.w3.org/2001/XMLSchema#string

Qi Liu

http://www.w3.org/2001/XMLSchema#string

Shibing Long

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Writam Banerjee

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Wu Fa Cai

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Xiaolong Zhao

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P304

18908-18917

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P31

scholarly article

P356

10.1039/C7NR06628G

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P407

English

P433

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P478

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P577

2017-11-27T00:00:00Z

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P698

29177343

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